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Texas State University

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PhD Position in Multimodal Scanning Probe Microscopy for Ultrawide Bandgap Semiconductors Texas State University in United States

Degree Level

PhD

Field of study

Electrical Engineering

Funding

The position is fully funded through the NSF CREST Center, including full tuition, stipend, and research support, contingent on satisfactory academic and research progress.

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Country

United States

University

Texas State University

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Keywords

Electrical Engineering
Materials Science
Condensed Matter Physics
Scanning Tunneling Microscopy
Afm
Physics

About this position

Texas State University is offering a fully funded Ph.D. position in experimental condensed matter and semiconductor physics, with a focus on multimodal scanning probe microscopy (SPM) characterization of ultrawide bandgap (UWBG) semiconductors. The successful candidate will join the Materials Science, Engineering, and Commercialization (MSEC) Ph.D. program and conduct research within the NSF CREST Center for Ultrawide Bandgap Semiconductor Device Materials. Research topics include nanoscale characterization of UWBG materials and devices (such as AlGaN, Ga2O3, SiC, hBN, diamond) using advanced SPM techniques, including AFM-based capacitance–voltage profiling, Kelvin probe force microscopy, and multimodal SPM for phase and interface analysis. The student will collaborate with interdisciplinary teams in materials growth, device physics, and AI/modeling, and benefit from professional development opportunities such as workshops, seminars, and outreach activities.

Applicants should have a strong background in Physics, Materials Science, Electrical Engineering, or a closely related field, with solid preparation in solid-state/semiconductor physics and electromagnetism. Hands-on experience with SPM or other nanoscale characterization techniques is highly desirable. Additional skills in semiconductor devices, nanofabrication, electronic circuit development, vacuum systems, and Python programming are advantageous. U.S. citizenship or permanent residency is required due to funding restrictions. The position provides full tuition, stipend, and research support through the NSF CREST Center, contingent on satisfactory progress.

To apply, candidates should submit a single PDF containing a cover letter, CV, unofficial transcripts, and contact information for 2–3 references to Dr. Yoichi Miyahara ([email protected]). Applications are reviewed on a rolling basis until the position is filled, and early applications are encouraged. For more information, visit the supervisor's academic page or the MSEC program website.

Funding details

The position is fully funded through the NSF CREST Center, including full tuition, stipend, and research support, contingent on satisfactory academic and research progress.

What's required

Applicants must have a B.S. or M.S. in Physics, Materials Science, Electrical Engineering, or a closely related field. Strong preparation in solid-state/semiconductor physics and electromagnetism is required. Demonstrated interest in experimental condensed matter or device physics is expected. Hands-on experience with scanning probe microscopy (AFM, STM, KPFM, PFM) or other nanoscale characterization techniques is highly desirable but not required. Experience with semiconductor devices, nanofabrication, electronic circuit development, vacuum systems, and programming skills in Python for data analysis, modeling, or instrument control are advantageous. Strong communication skills and interest in interdisciplinary research are important. U.S. citizenship or permanent residency is required due to funding rules.

How to apply

Submit a single PDF including a cover letter, CV, unofficial transcripts, and contact information for 2–3 references to Yoichi Miyahara ([email protected]) with the subject line 'Ph.D. Application – SPM for UWBG Semiconductors (NSF CREST / MSEC)'. Applications are reviewed on a rolling basis until filled; early applications are encouraged.

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