Postdoc in Area Selective Deposition and Atomic Layer Deposition of Nitrides at Linköping University Linköping University in Sweden

Linköping University is offering a postdoctoral position in area selective deposition (ASD) and atomic layer deposition (ALD) of group 13 nitrides, including AlN, GaN, InN, and their alloys. The project focuses on the bottom-up fabrication of semiconductor structures, aiming to deposit semiconductor material only on desired substrate areas. This research is at the intersection of chemistry, materials science, and thin film deposition, and is part of the world-leading department of Physics, Chemistry, and Biology (IFM) at Linköping University.

The successful candidate will work on developing ASD processes for semiconductors formed by metals in group 13 and nitrogen, generating surface chemical understanding needed to advance ASD of nanostructures. The research environment includes state-of-the-art plasma ALD reactors, mass spectroscopy, quartz crystal microbalance, optical emission spectroscopy, X-ray photoelectron spectroscopy (XPS), high-resolution X-ray thin film diffractometers, and electron microscopes for structural analysis.

Applicants must hold a PhD in chemistry, physics, materials science, or electrical engineering, and have hands-on experience with ALD, ALTech, ASD, or CVD techniques. Experience in deposition or etching of nitrides, electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy are considered merits.

The position is funded by a grant from the Carl Trygger Foundation, which pays a personal stipend quarterly. The foundation must approve the candidate before starting. The application deadline is 25 April 2026. For more information, visit the Pedersen group research page or contact Prof. Henrik Pedersen.

To apply, send your application letter, CV, PhD diploma, and any additional documents by email to [email protected] before the deadline.