Publisher
source

Dr J Zhang

9 months ago

GaN P-Channel Heterojunction Field-Effect Transistors for CMOS Circuit Xi’an Jiaotong-Liverpool University in China

Degree Level

PhD

Field of study

Electrical Engineering

Funding

Fully Funded

Deadline

Expired

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Country

China

University

Xi’an Jiaotong-Liverpool University

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Keywords

Electrical Engineering
Materials Science
Material Characterization
Nanoscience
Silicon Technology
Cmos Technology
Heterostructure Engineering
Technical Engineering
Field-effect Transistor
Physics

About this position

There is a growing need for high-performing p-FET semiconductors as demand for semiconductors is increasing. Although etching is the dominant method to produce p-FET, dry etching can significantly reduce device performance due to interface damage.

Funding details

Fully Funded

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