Postdoctoral Position in Nanoscale Stress Measurement for Semiconductors (Materials Science, Physics) George Washington University in United States

A postdoctoral position is available at George Washington University and NIST, focusing on measuring nanoscale stress and strain in semiconductor devices using advanced HR-EBSD and TKD techniques. The successful candidate will operate state-of-the-art SEM and FIB instruments, process high-resolution electron diffraction data, and contribute to the CHIPS Act initiative to advance U.S. semiconductor manufacturing. The research involves mapping lattice strain with unprecedented precision, analyzing data with Python, C++, or Matlab, and collaborating with both internal and external stakeholders, including industry partners and NIST teams. Applicants should have a Ph.D. in Materials Science, Physics, or a related field, with expertise in SEM, EBSD, elasticity, crystalline defects, and simulation tools such as FEA. The position is based at the NIST campus in Gaithersburg, MD, and offers the opportunity to directly impact the reliability and performance of leading-node microelectronics. Funding is provided as part of a postdoctoral fellowship, though specific financial details are not disclosed. Interested candidates should apply via the provided application link and prepare relevant supporting documents. This opportunity is ideal for researchers interested in materials science, electron microscopy, semiconductor technology, and advanced data analysis.