PhD Position in Scaled Source/Drain Epitaxial Layers for Nanosheet & Complementary Field-Effect Transistors

A PhD position is available within the imec epitaxy team at imec headquarters in Leuven, Belgium, in collaboration with KU Leuven. The research focuses on the scaled source/drain epitaxial layers for nanosheet and complementary field-effect transistors (CFET), which are key for next-generation CMOS technologies beyond the 1 nm node. The project aims to unravel the physical reactions governing Si:P and SiGe:B epitaxy in confined volumes, providing fundamental insights into the mechanisms affecting source/drain formation and their impact on device properties. The candidate will gain hands-on experience in epitaxial growth and material characterization using state-of-the-art 300 mm industry-compatible tools, supported by first-principles simulations. The work is multidisciplinary and conducted in a highly international environment. The required background is in physics or materials science, with the work being 70% experimental and 30% modeling/simulation. The main supervisors are Claudia Fleischmann (supervisor), Clément Porret (co-supervisor), and Thomas Dursap (daily advisor). Funding details are not specified, but imec PhD positions are typically funded. Interested candidates should apply online via the imec job portal and mention the reference code 2026-012 in their application.