Martin Kuball
Top university
7 months ago
High power radio frequency (RF) semiconductor technologies University of Bristol, UK and Imec, Belgium in United Kingdom
Degree Level
PhD
Field of study
Electrical Engineering
Funding
Full funding availableDeadline
December 31, 2026
Country
United Kingdom
University
University of Bristol
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Keywords
Electrical Engineering
Materials Science
Material Characterization
Silicon Technology
Device Fabrication
Microfluidic
Rf Circuit
Cooling Systems
Oxide
Physics
About this position
Funding details
Full funding including tuition fees and living expenses is available for this position. The scholarship covers all educational costs and provides a monthly stipend.
How to apply
Please submit your application including a cover letter, CV, academic transcripts, and contact information for two references. Applications should be sent via the online portal before the deadline.
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Position 4 - # Gallium # Oxide ( # Ga2O3 ) -based # RF # power devices with thermal management: High power radio frequency (RF) semiconductor technologies are of critical importance to a wide range of applications including defence, aerospace, science, medicine, and industrial heating. They enable systems to communicate across greater distances, process signals faster and more efficiently, and operate under extreme conditions. Gallium Oxide (Ga2O3) is a semiconductor material with strong promise for producing the next generation of efficient, high power RF devices due to its high saturation velocity. One of the core challenges is management of self-heating, a critical bottleneck due to the low thermal conductivity of Ga2O3. With efficiency of RF amplifiers being inherently lower than that of e.g. power devices (the most commonly explored use of Ga2O3) thermal dissipation is a key factor in determining the maximum achievable areal RF output power density and reliability. In this project, you will achieve efficient thermal management of Ga2O3 RF power devices through methods including integration of microfluidics positioned close to active device area and integration with diamond heat spreaders. The development of efficient, high power RF devices based on Ga2O3 will unlock routes to integration with power devices on a single material platform, with strongly positive implications for system size and manufacturing cost. This position will be split between the University of Bristol, UK and # Imec , Belgium. The CDTR group at the University of Bristol has Ga2O3 growth capability that will be utilized here, in addition to a strong track record of material characterization (including electronic traps, management of which is critical to RF device performance) and thermal management of RF devices, all of which will be undertaken in this project. Imec has strong expertise in RF device fabrication and characterization that will be utilized to produce and test the devices.
Please contact me on [email protected] or apply via https://lnkd.in/ediMwMbW . REWIRE-IKC