PhD in Photonics: Visible to Mid-Infrared Integrated Light Sources Based on Rare Earth-Doped Materials Compatible with Silicon Photonics Université de Rennes in France

PhD opportunity in photonics at the Foton Institute / Université de Rennes in Lannion, France, focused on visible to mid-infrared integrated light sources based on rare-earth-doped materials compatible with silicon photonics.

The project sits in the Photonic Systems team and combines micro/nano-fabrication, optical simulations, waveguide design, and device characterization. Research topics include integrated optical sources, passive and active integrated devices, hybrid integration, and the development of compact light sources for applications such as integrated sensors, lab-on-a-chip devices, biochemical sensing, quantum technologies, and telecom-related photonic components.

Technical work mentioned in the post includes waveguide patterning, photo/e-beam lithography, reactive ion etching and ICP etching, optical design/simulation of integrated waveguides, and characterization of passive and active waveguide properties. The materials context includes rare-earth-doped oxides and chalcogenides, with emphasis on extending emission from the visible toward the mid-infrared.

Eligibility highlights: strong background in physics and photonics; interest in both simulation and experimental work; prior experience with cleanroom activities, integrated device characterization, or photonic device simulation is preferred; good autonomy and communication skills in English or French.

Duration: 36 months. Start: September–November 2026. No stipend amount or tuition details are specified in the post.

How to apply: send a PDF application containing a cover letter, CV, academic transcript, and at least two reference letters to the listed supervisors by email.