PhD position in AI modeling and semiconductor processes Not mentioned in United States

Two PhD student positions are available in the High-Performance Engineering (HiPE) group at Texas State University, led by Dr. Damian Valles. These positions are part of an NSF-funded CREST Center focused on research in the application and development of artificial intelligence (AI) modeling for ultra-wide bandgap (UWBG) semiconductor processes.

The research aims to advance semiconductor materials fabrication, processing, and characterization, integrating modern AI techniques to investigate materials and heterostructures for next-generation devices operating at high power, high frequency, and under extreme conditions. The project is structured around three subprojects: developing novel UWBG heterointerfaces, implementing new scanning probe microscopy-based characterization techniques, and creating AI-based models for UWBG materials. Applicants must meet the requirements for the EE PhD program at Texas State University, hold an M.S. in ECE, CS, or a related field, have completed a Master's thesis, and be US citizens or permanent residents.

Candidates should be highly motivated, possess strong scientific problem-solving skills, have a publication record in applied AI development, and be interested in mentoring junior students. The positions offer a salary and tuition stipend, with funding provided by the NSF CREST Center. Interested candidates should email their CV, transcript, and cover letter to Dr. Valles at [email protected].

More information about the HiPE group and the NSF award can be found at the provided links. The application window is open for a January 2026 start or until the positions are filled.