Doctoral Student in SiC Bipolar Devices for Power Electronics KTH Royal Institute of Technology in Sweden

This doctoral position at KTH Royal Institute of Technology focuses on research and development of Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) and Insulated Gate Bipolar Transistor (IGBT) devices for advanced power electronics applications. The project aims to enhance the energy efficiency, performance, and reliability of power electronics used in sectors such as renewable energy, electric vehicles, and industrial automation. The successful candidate will engage in the fabrication and characterization of novel SiC devices, working within KTH’s state-of-the-art Electrum Laboratory.

The research will emphasize semiconductor process technology to improve device performance and will be conducted as part of an internationally recognized SiC research group and the EU WBG Pilot Line project. Supervision will be provided by Professor Per-Erik Hellström. The position offers a dynamic, international research environment with opportunities for collaboration with industry and leading universities worldwide.

Employment is full-time, with a monthly salary according to KTH’s doctoral student salary agreement, and includes employee benefits. Applicants must have a relevant master’s degree or equivalent, demonstrate proficiency in English (English B/6), and show the ability to work independently and collaboratively. Experience with power semiconductor devices and process technology is advantageous. The application process requires submission of a CV, application letter, academic transcripts, proof of language proficiency, and relevant publications.

The position is based in Stockholm, Sweden, and applications must be submitted through KTH’s recruitment system by November 28, 2025.