Per-Erik Hellström

PhD Position in SiC Transistors for Power Electronics at KTH Royal Institute of Technology This doctoral position is focused on pioneering research in silicon carbide (SiC) bipolar junction transistors (BJTs) and insulated-gate bipolar transistors (IGBTs) for next-generation power electronics applications. These advanced components are essential for improving energy efficiency, performance, and reliability in sectors such as renewable energy, electric vehicles, and industrial automation. The successful candidate will be involved in the fabrication and characterization of novel components at KTH's Electrum Laboratory, with a strong emphasis on semiconductor process technology to enhance device performance. The research is conducted within an internationally recognized SiC research group and is connected to the EU project WBG Pilot Line, offering opportunities for collaboration with industry and leading universities worldwide. Supervision and Environment Supervision is proposed by Professor Per-Erik Hellström, a leading expert in the field. The doctoral student will join a dynamic, international research environment with access to state-of-the-art facilities and a vibrant academic community. Funding and Employment The position is a full-time, fixed-term employment for up to four years, with a monthly salary according to KTH's agreement for doctoral students. Employment benefits and a supportive workplace are provided, with the possibility to engage in teaching or administrative tasks up to 20% of the time. Eligibility and Requirements Applicants must hold a master's degree or equivalent, or have completed at least 240 ECTS credits (with at least 60 at the advanced level). Proficiency in English equivalent to English B/6 is mandatory. Experience with power components and semiconductor process technology is advantageous. Selection is based on academic qualifications, motivation, ability to work independently and collaboratively, and personal suitability. Application Process Applications must be submitted via KTH's recruitment system by November 28, 2025. Required documents include a CV, cover letter, degree certificates, transcripts, proof of language proficiency, and representative publications. Translations to English or Swedish are required if documents are in other languages. About KTH KTH Royal Institute of Technology is a leading international technical university, committed to education, research, and innovation for a sustainable future. The university offers a creative and dynamic work environment with excellent conditions and benefits, promoting equality, diversity, and equal opportunities. For further information, contact Professor Per-Erik Hellström at [email protected] or visit his academic profile . Application link: Apply here .

This doctoral position at KTH Royal Institute of Technology focuses on research and development of Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) and Insulated Gate Bipolar Transistor (IGBT) devices for advanced power electronics applications. The project aims to enhance the energy efficiency, performance, and reliability of power electronics used in sectors such as renewable energy, electric vehicles, and industrial automation. The successful candidate will engage in the fabrication and characterization of novel SiC devices, working within KTH’s state-of-the-art Electrum Laboratory. The research will emphasize semiconductor process technology to improve device performance and will be conducted as part of an internationally recognized SiC research group and the EU WBG Pilot Line project. Supervision will be provided by Professor Per-Erik Hellström. The position offers a dynamic, international research environment with opportunities for collaboration with industry and leading universities worldwide. Employment is full-time, with a monthly salary according to KTH’s doctoral student salary agreement, and includes employee benefits. Applicants must have a relevant master’s degree or equivalent, demonstrate proficiency in English (English B/6), and show the ability to work independently and collaboratively. Experience with power semiconductor devices and process technology is advantageous. The application process requires submission of a CV, application letter, academic transcripts, proof of language proficiency, and relevant publications. The position is based in Stockholm, Sweden, and applications must be submitted through KTH’s recruitment system by November 28, 2025.