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National Taiwan University of Science and Technology

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Master’s and PhD Opportunities in III–V Light-Emitting Transistor and OEIC Research at National Taiwan University National Taiwan University in Taiwan

Degree Level

Master's, PhD

Field of study

Electrical Engineering

Funding

Available

Deadline

Sep 7, 2026

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Country

Taiwan

University

National Taiwan University of Science and Technology

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Keywords

Electrical Engineering
Materials Science
Semiconductor Physics
Analog Electronics
Temperature Sensing
Physics

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About this position

Master’s and PhD opportunities are available at National Taiwan University (NTU), Taiwan for February 2027 entry in research on III–V-based Light-Emitting Transistors (LETs), Transistor Lasers, and optoelectronic integrated circuits (OEICs).

The project centers on advanced semiconductor device physics and device–circuit co-design, including quantum-well HBT structures, temperature-sensitive LETs for thermal sensing, front-end circuits for thermal sensors, bandgap reference circuits, SRAM, and high-speed OEIC applications. Students with interests in analog/mixed-signal circuit design, TCAD simulation, Cadence Virtuoso, Keysight ADS, III–V compound semiconductors, photonics, and integrated sensing technologies are especially encouraged to apply.

The post welcomes motivated students with a strong academic record, preferably a high GPA, plus relevant research experience, publications, projects, or technical skills in semiconductor devices, circuits, photonics, or TCAD. Enthusiasm for interdisciplinary research and willingness to learn are highlighted as important qualities.

This is an academic research opportunity rather than a scholarship announcement. The post does not mention funding, tuition support, or fee waivers.

Application deadline: 2026-09-07. Entry term: February 2027.

How to apply: Use the application form linked in the post, prepare a strong CV, and include evidence of your academic and technical background. For questions, email the contact address provided; the poster asks applicants not to send LinkedIn messages.

Funding details

Available

What's required

Applicants should have a background or strong interest in semiconductor device physics, analog or mixed-signal circuit design, front-end circuit design for sensors, bandgap reference circuits, SRAM and integrated circuit design, TCAD simulation, Cadence Virtuoso, Keysight ADS, III–V compound semiconductors, optoelectronics, and semiconductor device-circuit co-design. The post encourages enthusiastic learners and interdisciplinary researchers, and asks for a strong CV with a strong academic record (preferably high GPA), relevant research experience, publications, projects, or technical skills related to semiconductor devices, circuits, photonics, or TCAD.

How to apply

Submit the application form linked in the post and prepare a strong CV highlighting academic record, research experience, publications, projects, and relevant technical skills. For inquiries, email the contact address provided and do not use LinkedIn messages. Apply for February 2027 entry before the deadline.

More information can be found here

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