Grenoble INP - Institute of Engineering
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PhD in Superconducting Devices in Silicon Technology (PHELIQS) Grenoble INP - Institute of Engineering in France
Degree Level
PhD
Field of study
Electrical Engineering
Funding
Available
Deadline
Sep 23, 2026
Country
France
University
Grenoble INP - Institute of Engineering
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About this position
This PhD position at Grenoble INP – Institute of Engineering (PHELIQS) focuses on superconducting devices in silicon technology, with a particular emphasis on quantum transport in CMOS silicon transistors at very low temperatures (<100 mK). The project investigates silicon-based transistors whose source and drain contacts are superconducting, aiming to understand how superconductivity modifies the electronic response of the device.
The research is centered on identifying the conditions under which superconducting correlations can propagate through the silicon channel, especially in the shortest devices, and on demonstrating a tunable supercurrent via the Josephson effect. The work is intended to support the development of scalable superconducting quantum devices relevant to quantum information processing.
The experimental program includes the integration of materials such as silicides, mainly CoSi2, and superconducting boron-doped silicon (Si:B) produced by laser annealing. Detailed analysis of the resulting devices will be used to characterize contact resistance at the source/drain contacts and the superconducting proximity effect in the silicon channel. After establishing these results, the project will move toward more complex geometries, including superconducting qubits such as gatemons and gate-tunable transmons, together with on-chip capacitors and superconducting resonators.
Device fabrication will be carried out in collaboration with LETI and STMicroelectronics. The process flow has already been established, some devices are already under fabrication, and the project benefits from a dedicated mask set and prior studies on silicides and Si:B. This provides a strong platform for advancing superconducting transistor fabrication in 300 mm technology.
Eligibility highlights include a Master’s 2 / engineering degree or equivalent five years of higher education. The posting also seeks strong background knowledge in nanoscience, nanotechnology, quantum technologies, physics, applied mathematics, and computer science, along with excellent spoken and written English.
The position is a full-time temporary PhD opening in France, with an intended start date of 1 October 2026. Applications must be submitted by email before 23 September 2026 at 20:00 (Europe/Paris).
Funding details
Available
What's required
Master’s degree or equivalent is required, specifically 5 years of higher education (Master 2 / engineering degree). Core competencies sought include nanoscience, nanotechnology, quantum technologies, physics, applied mathematics, and computer science. Applicants must have fluent English, both spoken and written.
How to apply
Send your application by email to [email protected] before 23 September 2026 at 20:00 (Europe/Paris). Use the email address listed in the posting; the apply links also point to the same contact.
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