Université Grenoble Alpes
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PhD Position: Cryogenic exploration of 1/f and Random Telegraph Noise effects in advanced transistors for quantum system control/readout electronics Université Grenoble Alpes in France
Degree Level
PhD
Field of study
Electrical Engineering
Funding
Available
Deadline
Sep 7, 2026
Country
France
University
Université Grenoble Alpes

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About this position
PhD opportunity at Université Grenoble Alpes / CROMA Laboratory in Grenoble, France
This PhD project is part of the QuanG2 doctoral call and is focused on the cryogenic behaviour of trap-related noise in advanced transistors used for quantum-system control and readout electronics. The research addresses two major low-frequency phenomena in nanoscale CMOS devices: 1/f noise and Random Telegraph Noise (RTN). These effects become especially important at deep cryogenic temperatures and can strongly affect the stability, precision, and reliability of cryo-CMOS circuits placed near qubit devices.
The thesis will investigate noise effects down to 4 K through experimental studies and will also develop physics-based compact noise models for cryo-circuit design. A key goal is to improve understanding of trapping/detrapping mechanisms and support accurate circuit modelling for quantum technology applications. The project will also consider related aging effects such as Bias Temperature Instabilities (BTI).
Technologies under study include FD-SOI MOSFETs, ranging from industrial 28 nm devices from ST to emerging LETI NextGen technologies aiming at 10 nm, as well as III-V HEMTs from IBM Zurich. This broad device scope is intended to cover multiple application scenarios such as low-noise amplifiers and sensors in cryogenic and quantum electronic systems.
The position is hosted in Grenoble, France, within the Grenoble quantum research ecosystem. The programme offers a fully funded three-year PhD with dedicated research and training support under Horizon Europe COFUND. Applicants should have a Master’s degree or equivalent, should not already hold a PhD, and must satisfy the MSCA mobility rule. Strong preparation in electron device physics and electronics, practical experience with electrical measurements and data analysis, and good English communication skills are required.
The application deadline is 7 September 2026 at 12:00 PM (Paris time). Applications must be submitted through the QuanG2 online application platform.
Funding details
Available
What's required
Applicants must hold a Master’s degree or equivalent qualification by the application deadline and must not already hold a doctoral degree. They must comply with the MSCA mobility rule, meaning they must not have resided or carried out their main activity in France for more than 12 months during the 36 months immediately preceding the deadline. Applicants must not be current employees of the host laboratory. Required skills include a strong background in electron device physics and electronics, experience with electrical measurements and data processing (Python/MATLAB), and a good level of English language plus communication and presentation skills.
How to apply
Apply through the QuanG2 online application platform using the provided application form. Submit the application by 7 September 2026 at 12:00 PM Paris time. Candidates will first undergo eligibility checking and then the selection stages described in the call.
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