Hideto Miyake

Professor

Mie university

Japan

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Articles (8)

Optical characterization of point defects on internal quantum efficiency in AlGaN quantum wells grown on face-to-face-annealed sputtered AlN templates

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Year:

2023

Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning

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Year:

2022

263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities

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Year:

2022

Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in Al x Ga1−x N films and multiple quantum wells grown by metalorganic vapor phase epitaxy

Article Link

Year:

2022

Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- And a-plane sapphire under high-temperature annealing

Article Link

Year:

2021

Thick AlN layers grown on micro-scale patterned sapphire substrates with sputter-deposited annealed AlN films by hydride vapor-phase epitaxy

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Year:

2021

Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

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Year:

2020

Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template

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Year:

2020

Collaborators (6)

Kanako Shojiki

講師 / Senior Lecturer/ Junior Associate Professor

Kyoto University

JAPAN

Tetsuya Tohei

Associate Professor

Osaka University

JAPAN

YongJin Cho

Cornell University

UNITED STATES

Yoichi Yamada

Yamaguchi University

JAPAN

Huili Xing

Professor

Cornell University

UNITED STATES

Christoph Hugenschmidt

Prof. Dr. rer. nat. habil.

Ludwig-Maximilians-Universität München

GERMANY

Hideto Miyake

Research Interests

Explore related searches

Contact this professor

Articles (8)

Optical characterization of point defects on internal quantum efficiency in AlGaN quantum wells grown on face-to-face-annealed sputtered AlN templates

Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning

263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities

Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in Al x Ga1−x N films and multiple quantum wells grown by metalorganic vapor phase epitaxy

Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- And a-plane sapphire under high-temperature annealing

Thick AlN layers grown on micro-scale patterned sapphire substrates with sputter-deposited annealed AlN films by hydride vapor-phase epitaxy

Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template

Collaborators (6)

Kanako Shojiki

Tetsuya Tohei

YongJin Cho

Yoichi Yamada

Huili Xing

Christoph Hugenschmidt

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