Javier Mateos

Full Professor

Universidad de Salamanca

Spain

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Research Interests

Hardware Engineering

20%

Electromagnetic

20%

Semiconductor Physics

80%

High-frequency Electronics

30%

Electrical Engineering

30%

Transistor Technology

30%

Solid-state Electronics

30%

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Articles20

Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight

Year:

2025

Photoresponse of asymmetric planar GaN-based nanodiodes at low temperature

Year:

2025

Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature

Year:

2025

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Year:

2024

On the Effect of Low-Energy Electron Irradiation in the RF Responsivity of GaN Nanodiodes

Year:

2024

Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

Year:

2024

Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

Year:

2024

Analysis of mm-Wave Detection with AlGaN/GaN HEMTs by means of Measurements and Physical and Equivalent Circuit Models

Year:

2024

GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

Year:

2024

Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range

Year:

2023

A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the $I$–$V$ Curve and S-Parameters

Year:

2023

Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

Year:

2022

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Year:

2022

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

Year:

2022

Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

Year:

2022

Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

Year:

2021

Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

Year:

2021

Influence of Laser Modulation Frequency on the Performance of Terahertz Photoconductive Switches on Semi-Insulating GaAs Exhibiting Negative Differential Conductance

Year:

2021

Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes

Year:

2021

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Year:

2020

Collaborators6

Ignacio Iñiguez de la Torre

Universidad de Salamanca

SPAIN

Yvon Cordier

-

FRANCE

Tomas Gonzalez

Full Professor

Universidad de Salamanca

SPAIN

Christophe GAQUIERE

Professor

Université Lille 1 - Sciences et Technologies

FRANCE

Héctor Sánchez Martín

Universidad de Salamanca

SPAIN

Mahmoud ABOU DAHER

Université de Lille

FRANCE

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