Javier Mateos

Full Professor

Universidad de Salamanca

Spain

Research Interests

Explore related searches

Professors in Spain

Contact this professor

ORCID

Google Scholar

About

Javier Mateos is a Full Professor at Universidad de Salamanca in Spain. His research focuses on the electrothermal modeling of GaN high electron mobility transistors, GaN-based nanodiodes, and the analysis of DC–AC conversion efficiency in various semiconductor devices. He has contributed to the understanding of low-energy electron irradiation effects on RF responsivity and has developed small-signal equivalent circuit models for GaN technologies.

Javier Mateos

Research Interests

Explore related searches

Contact this professor

About

Articles (20)

Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight

Photoresponse of asymmetric planar GaN-based nanodiodes at low temperature

Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

On the Effect of Low-Energy Electron Irradiation in the RF Responsivity of GaN Nanodiodes

Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

Analysis of mm-Wave Detection with AlGaN/GaN HEMTs by means of Measurements and Physical and Equivalent Circuit Models

GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range

A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the $I$–$V$ Curve and S-Parameters

Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

Influence of Laser Modulation Frequency on the Performance of Terahertz Photoconductive Switches on Semi-Insulating GaAs Exhibiting Negative Differential Conductance

Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Collaborators (6)

Ignacio Iñiguez de la Torre

Yvon Cordier

Tomas Gonzalez

Christophe GAQUIERE

Héctor Sánchez Martín

Mahmoud ABOU DAHER

How do I reach out?

Meet Kite AI