Nicolas Grandjean

EPFL (École Polytechnique Fédérale de Lausanne)

Switzerland

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Articles (10)

Near ultraviolet photonic integrated lasers based on silicon nitride

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Year:

2022

Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

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Year:

2022

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

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Year:

2021

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

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Year:

2021

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c -plane GaN/AlN quantum dots emitting in the UV range

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Year:

2021

Defect incorporation in In-containing layers and quantum wells: Experimental analysis via deep level profiling and optical spectroscopy

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Year:

2021

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

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Year:

2021

GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface

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Year:

2021

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

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Year:

2021

Smooth GaN membranes by polarization-assisted electrochemical etching

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Year:

2021

Collaborators (5)

Mauro Mosca

University of Palermo

ITALY

FRANCESCO BERTAZZI

Associate Professor

Politecnico di Torino

ITALY

Robert Taylor

University of Oxford

UNITED KINGDOM

Michael Bergmann

Chalmers University of Technology

SWEDEN

Johann Riemensberger

EPFL (École Polytechnique Fédérale de Lausanne)

SWITZERLAND

Nicolas Grandjean

Research Interests

Explore related searches

Contact this professor

Articles (10)

Near ultraviolet photonic integrated lasers based on silicon nitride

Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c -plane GaN/AlN quantum dots emitting in the UV range

Defect incorporation in In-containing layers and quantum wells: Experimental analysis via deep level profiling and optical spectroscopy

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

Smooth GaN membranes by polarization-assisted electrochemical etching

Collaborators (5)

Mauro Mosca

FRANCESCO BERTAZZI

Robert Taylor

Michael Bergmann

Johann Riemensberger

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