Raphael Behrle

TU Wien

Austria

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Articles (14)

Gate-induced electron transfer effects in monolithic Al–Ge–Al nanostructures

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Year:

2025

Bias-tunable temperature coefficient of resistance in Ge transistors

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Year:

2024

Understanding the Electronic Transport of Al–Si and Al–Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy

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Year:

2024

Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels

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Year:

2024

Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors

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Year:

2023

Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts

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Year:

2023

Electrical and Structural Properties of Si1−xGex Nanowires Prepared from a Single-Source Precursor

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Year:

2023

Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures

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Year:

2023

Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single‐Elementary Al Contacts

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Year:

2022

Monolithic and Single-Crystalline Aluminum–Silicon Heterostructures

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Year:

2022

A Top‐Down Platform Enabling Ge Based Reconfigurable Transistors

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Year:

2022

Nanometer-Scale Ge-Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multivalued Logic

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Year:

2021

Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts

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Year:

2021

Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics

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Year:

2021

Collaborators (9)

Masiar Sistani

TU Wien

AUSTRIA

Johannes Aberl

PhD position in the "Group-IV nano and heterostructures" group of Assoz. Univ.-Prof. Moritz Brehm

Johannes Kepler University Linz

AUSTRIA

Sven Barth

Goethe University Frankfurt

GERMANY

Alois Lugstein

AUSTRIA

Daniele Nazzari

TU Wien

AUSTRIA

Moritz Brehm

Prof. at Johannes Kepler University Linz

Johannes Kepler University Linz

AUSTRIA

Martien Ilse den Hertog

Université Grenoble Alpes

FRANCE

Michael Seifner

Technical University of Denmark

DENMARK

Walter M. Weber

Professor for Nanoelectronics

TU Wien

AUSTRIA

Raphael Behrle

Research Interests

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Contact this professor

Articles (14)

Gate-induced electron transfer effects in monolithic Al–Ge–Al nanostructures

Bias-tunable temperature coefficient of resistance in Ge transistors

Understanding the Electronic Transport of Al–Si and Al–Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy

Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels

Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors

Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts

Electrical and Structural Properties of Si1−xGex Nanowires Prepared from a Single-Source Precursor

Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures

Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single‐Elementary Al Contacts

Monolithic and Single-Crystalline Aluminum–Silicon Heterostructures

A Top‐Down Platform Enabling Ge Based Reconfigurable Transistors

Nanometer-Scale Ge-Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multivalued Logic

Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts

Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics

Collaborators (9)

Masiar Sistani

Johannes Aberl

Sven Barth

Alois Lugstein

Daniele Nazzari

Moritz Brehm

Martien Ilse den Hertog

Michael Seifner

Walter M. Weber

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