Ray Hueting

The University of Twente’s Integrated Devices & Systems (IDS) and Power Electronics (PE) groups are offering a PhD position focused on the physics of tunnelling devices for ultralow-power electronics, as part of the TunnelVision project. This research aims to explore the feasibility of novel ultralow-power electronics leveraging quantum-mechanical tunnelling processes in advanced CMOS technology, with significant potential for Internet-of-Things (IoT) and edge artificial intelligence applications. The project is a collaborative effort, led by the Integrated-Circuit Design (ICD) group, and involves close cooperation with a second PhD student developing ultralow-power circuit blocks based on tunnelling. The successful candidate will experimentally study quantum-mechanical tunnelling processes, address the physics and device modelling/simulation aspects of new tunnelling devices, and use dedicated electrical DC and RF measurement equipment to develop and analyse specially designed test structures and devices. A key challenge will be to co-develop physics-based models for circuit simulations, informed by a thorough literature review and research outcomes. The position offers daily guidance from experienced supervisors, Dr. Ray Hueting (PE group) and Prof. Jurriaan Schmitz (IDS group), with additional support from a senior engineer. Collaboration is central, involving extensive interaction with scientific staff and industry partners such as NXP Semiconductors. The role also includes teaching activities in the candidate’s field of expertise, accounting for 10%-20% of the time. The research is conducted within the Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS), a multidisciplinary environment with strong ties to industry and international research institutes. The project is funded by the Netherlands Organisation for Scientific Research (NWO) in Applied and Engineering Sciences (TTW). Applicants should have a Master’s degree in physics, electrical engineering, or a related field, with a strong background in quantum mechanics, semiconductor device physics, and experimental techniques. Proficiency in English is required. Applications must include a CV, cover letter, and, if applicable, a list of publications and references. The deadline for applications is January 5, 2026.