Serge Ecoffey
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Professor Serge Ecoffey is a faculty member at Université de Sherbrooke in Canada. His research focuses on advanced materials and semiconductor technologies, with recent publications including work on CMOS-compatible ferroelectric memory, hydrogen sensors, and memristors. He also explores innovative techniques for nano-patterning and etching processes, contributing substantially to the field of microelectronics.
Articles (14)
Analog programming of CMOS-compatible Al2O3/TiO2−x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming
Exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and cryogenic electronics. In this context, our study focuses on the characterization at cryogenic temperatures (4.2 K) of TiO2−x-based memristors fabricated with a CMOS-compatible etch-back process. We demonstrate a so-called cryogenic reforming (CR) technique performed at 4.2 K to overcome the well-known metal-insulator transition (MIT), which limits the analog behavior of memristors at low temperatures. This cryogenic reforming process was found to be reproducible and led to a durable suppression of the MIT. This process allowed to reduce by ∼20% the voltages required to perform DC resistive switching at 4.2 K. Additionally, conduction mechanism studies of memristors before and after cryogenic reforming from 4.2 to 300 K revealed different behaviors above 100 K, indicating a potential change in the conductive filament stoichiometry. The reformed devices exhibit a conductance level that is 50 times higher than ambient-formed memristor, and the conduction drop between 300 and 4.2 K is 100 times smaller, indicating the effectiveness of the reforming process. More importantly, CR enables analog programming at 4.2 K with typical read voltages allowing to store up to 4 bits of information on a single CR memristor. Suppressing the MIT improved the analog switching dynamics of the memristor leading to ∼250% larger on/off ratios during long-term depression (LTD)/long-term potentiation (LTP) resistance tuning. This enhancement opens up the possibility of using TiO2−x-based memristors to be used as synapses in neuromorphic computing at cryogenic temperatures.
Year:
2023
Collaborators (8)
Dominique Drouin
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Andreas Ruediger
Full professor (since 2016)
Institut national de la recherche scientifique
Paul Charette
Professor
Université de Sherbrooke
Serge Charlebois
Professor
Université de Sherbrooke
Fabien Alibart
Institut d'Électronique de Microélectronique et de Nanotechnologie
Tejinder Singh
Chief Architect and Engineering Research Lead (2024-Present), Senior Principal Member of Technical Staff (2023-2024), Principal Member of Technical Staff (2021-2023)
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Denis Machon
CNRS
Amirali Amirsoleimani
Assistant Professor
York University

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