Eindhoven University of Technology
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PhD in Advanced Epitaxial Growth for InP-Based Photonic Integrated Circuits Eindhoven University of Technology in Netherlands
Degree Level
PhD
Field of study
Electrical Engineering
Funding
Funding details are not specified in the post; this is presented as a PhD position at TU/e and may be a salaried doctoral appointment, but no stipend, tuition, or fee information is given.
Deadline
Nov 10, 2026
Country
Netherlands
University
Eindhoven University of Technology

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About this position
PhD opportunity at Eindhoven University of Technology (TU/e) in the Netherlands on advanced epitaxial growth for InP-based photonic integrated circuits.
The project focuses on the foundation of photonic integrated circuits (PICs): the epitaxial growth of functional semiconductor materials. Research topics include InP-based materials such as InGaAsP and InAlGaAs, growth optimization using a newest-generation Aixtron epi reactor, and linking growth parameters to the electro-optical performance and reliability of active components such as lasers and semiconductor optical amplifiers.
A second major theme is yield and manufacturability. The PhD researcher will analyze fab data, study failure mechanisms and defect sources, and develop predictive models to improve repeatability, reliability, and large-scale integration of PICs. The work is connected to the JePPIX Pilot Line and involves collaboration with the Photonic Integration Group and external foundry partners.
This position is suitable for candidates with interests in physics, materials science, electrical engineering, and chemical engineering, especially those with a background or strong motivation in epitaxial growth, semiconductor materials, photonics, optical chips, and process modeling.
No funding, stipend, or tuition-waiver details are stated in the post. The application deadline is 10 November 2026. Apply via the AcademicTransfer link provided in the vacancy.
Funding details
Funding details are not specified in the post; this is presented as a PhD position at TU/e and may be a salaried doctoral appointment, but no stipend, tuition, or fee information is given.
What's required
Applicants should be interested in epitaxial growth of InP-based materials and photonic integrated circuits. The project emphasizes understanding of InGaAsP and InAlGaAs growth, material uniformity, electro-optical performance, reliability, data analysis, failure mechanisms, defect sources, and predictive modeling for manufacturing. Collaboration with foundry partners and work with real fab data are part of the role.
How to apply
Apply through the AcademicTransfer job page linked in the post. Review the full vacancy details and submit your application via the portal before the deadline. Use the university/job listing for any required documents or further instructions.
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