Eindhoven University of Technology
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PhD in Advanced Epitaxial Growth for InP-Based Photonic Integrated Circuits Eindhoven University of Technology in Netherlands
Degree Level
PhD
Field of study
Computer Science
Funding
Fixed-term PhD contract for 4 years. Full-time employment with a salary in scale P of €3,204–€4,051 gross per month, plus 8% holiday allowance and 8.3% year-end bonus. Benefits include pension contributions, leave, training, commuting/work-from-home/internet allowances, and access to campus facilities.
Deadline
Nov 11, 2026
Country
Netherlands
University
Eindhoven University of Technology
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About this position
PhD opportunity at Eindhoven University of Technology (TU/e) in the area of photonic integrated circuits, epitaxial growth, InP-based materials, and compound semiconductors. The project focuses on the foundation of PICs: growing functional materials such as InGaAsP and InAlGaAs using a newest-generation Aixtron epi reactor, then linking growth conditions to electro-optical performance, reliability, yield, and manufacturability.
You will investigate the limits of epitaxial growth for InP-based materials, study active components such as lasers and amplifiers, and develop predictive models that connect the physics and chemistry of MOVPE/MOCVD to large-scale integration of photonic chips. A major part of the work is data analysis for yield learning, defect analysis, and failure mechanisms, in collaboration with commercial foundry partners and the JePPIX Pilot Line.
This is a PhD position at TU/e in Eindhoven, Netherlands. The appointment is for 4 years, full-time, with an intermediate assessment after 9 months. The salary is in Dutch university scale P (€3,204–€4,051 gross per month), plus holiday allowance, year-end bonus, pension, leave, training, and campus benefits.
Applicants should have a master’s degree in materials science, applied physics, electrical engineering, or a related field. Required strengths include semiconductor physics, crystallography, material characterization, epitaxial growth processes, statistical analysis, and the ability to work with large datasets and manufacturing challenges. English at C1 level is required.
Deadline: 11 November 2026. Apply through AcademicTransfer and contact Kevin Williams for role-specific questions or Kevin Caris for application-process questions.
Funding details
Fixed-term PhD contract for 4 years. Full-time employment with a salary in scale P of €3,204–€4,051 gross per month, plus 8% holiday allowance and 8.3% year-end bonus. Benefits include pension contributions, leave, training, commuting/work-from-home/internet allowances, and access to campus facilities.
What's required
Master’s degree in materials science, applied physics, electrical engineering, or a similar field. Applicants should have knowledge and understanding of semiconductor physics, crystallography, and material characterization techniques, as well as epitaxial growth processes such as MOCVD/MOVPE and compound semiconductor materials. Strong ability to analyze large datasets, identify failure mechanisms and defects, build statistical models linking material properties to device performance, and formulate novel process methods is required. Fluent spoken and written English at C1 level is required.
How to apply
Apply now via the AcademicTransfer application page. For questions about the role, contact Kevin Williams at [email protected]. For application process questions, consult the TU/e application process page or contact HR advisor Kevin Caris at [email protected].
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