Post-doc Position: Advanced Electrochemical Processing of Wide-Bandgap Semiconductors TU Wien in Austria

TU Wien is offering a post-doc position in the Research Unit of Microsystems Technology at the Institute of Sensor and Actuator Systems, focused on advanced electrochemical processing of wide-bandgap semiconductors, especially silicon carbide (SiC). The project sits at the intersection of semiconductor processing, electrochemistry, surface engineering, and high-temperature treatment of porous semiconductor materials.

The successful candidate will conduct application-oriented fundamental research on process development and optimisation, including porous SiC formation, electrochemical polishing, electrochemical oxidation, and related surface engineering techniques. The role also involves investigating underlying mechanisms in electrochemical reactions, pore formation, semiconductor dissolution, and surface modification, using both experimental and simulation-based approaches. In addition, the post-doc will explore high-temperature treatment strategies such as reorganisation, surface diffusion, condensation/evaporation phenomena, and microstructure evolution.

Beyond core research, the position includes designing, fabricating, and characterising novel semiconductor structures with potential applications in future MEMS and power electronic devices. The post-doc will independently plan and evaluate experiments, publish in international peer-reviewed journals, present at conferences, co-supervise PhD and Master’s students, and contribute to the coordination of project activities and the development of future research proposals.

The appointment is at TU Wien in Vienna, Austria, and is limited to 1 year for 40 hours/week, with a possible extension of another 2 years. The post carries an entry-level salary under the Austrian collective agreement (pay grade B1), with a gross annual salary of 70,200.20 EUR for full-time work and potential increases for relevant experience.

Applicants must have a PhD or comparable degree in physics, electrical engineering, materials science, chemistry, or a related field. Strong expertise in structural and chemical analysis of wide band-gap semiconductors is required, along with solid English communication skills and the ability to work independently in an interdisciplinary research setting. Experience in electrochemical processing, surface diffusion, high-temperature materials processing, micro- and nanofabrication, thin film analysis, modelling/simulation, and student supervision is considered advantageous.

The application deadline is 2026-09-09. Applicants should submit a single PDF containing a motivation letter, CV, grade transcripts, and BSc/MSc/PhD certificates via email to [email protected]. For project-related questions, contact the principal investigator, Dr. Georg Pfusterschmied, at [email protected].