Postdoctoral Researcher in Novel SWIR and Room-Temperature MWIR CQD Photodetectors King Abdullah University of Science and Technology (KAUST) in Saudi Arabia

Postdoctoral Researcher in Novel SWIR and Room-Temperature MWIR CQD Photodetectors at King Abdullah University of Science and Technology (KAUST), Saudi Arabia.

This postdoctoral opportunity is based in KAUST’s Physical Science and Engineering / Materials Science and Engineering environment and sits at the intersection of colloidal quantum dot synthesis, infrared optoelectronics, and device physics. The project focuses on next-generation short-wave infrared (SWIR) and exploratory room-temperature mid-wave infrared (MWIR) photodetectors using III–V, Ag2Te, and related colloidal quantum dots, including InAs-, InSb-, Ag2Te-, and extended-SWIR PbS/PbSe-based systems.

The lab aims to build a materials-to-device platform that links CQD surface reconstruction, ligand engineering, precursor chemistry, energetic band alignment, and low-trap-density CQD solids to high-performance infrared detector architectures. One postdoctoral direction emphasizes CQD synthesis and surface chemistry, including solution-phase ligand exchange and thin-film engineering. The other emphasizes device architecture design, charge-transport-layer engineering, dark-current suppression, metasurface integration, optical-field manipulation, and low-noise detector characterization.

The successful candidate will fabricate CQD infrared photodetectors from solution-processed thin films, optimize transport layers, electrodes, and interfaces, and measure key performance metrics such as responsivity, EQE, detectivity, dark current, noise spectral density, linear dynamic range, response time, and stability. The role also includes investigating dark-current mechanisms, trap-assisted transport, carrier mobility, and recombination dynamics, while collaborating closely with the CQD chemistry team to connect ligand chemistry and passivation with device performance.

Applicants should hold a PhD in chemistry, materials science, electrical engineering, applied physics, photonics, chemical engineering, or a related field. Strong experience in thin-film optoelectronic device fabrication and solid understanding of photodetector physics, semiconductor junctions, charge transport, and recombination are required. Experience with CQD photodetectors, SWIR or MWIR devices, low-noise measurements, detectivity analysis, interfacial engineering, and narrow-bandgap materials such as InAs, InSb, Ag2Te, HgTe, PbS, or PbSe is highly desirable.

The position is postdoctoral, not PhD or MSc. Applications are accepted through Interfolio only; email applications to the PI or team members will not be considered. The published deadline is 2026-12-03.