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source

KTH Royal Institute of Technology

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Doctoral student in SiC bipolar devices for power electronics KTH Royal Institute of Technology in Sweden

Degree Level

PhD

Field of study

Electrical Engineering

Funding

Doctoral student employment at KTH with monthly salary according to KTH’s doctoral student salary agreement. Temporary full-time position; employment is initially for up to one year and may be renewed, with total doctoral employment not exceeding four years.

Deadline

Aug 31, 2026

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Country

Sweden

University

KTH Royal Institute of Technology

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Keywords

Electrical Engineering
Materials Science
Energy Engineering
Electric Vehicle
Silicon Technology
Industrial Automation
Device Fabrication
Silicon Carbide
Power Electronic
Physics

About this position

Doctoral student in SiC bipolar devices for power electronics at KTH Royal Institute of Technology (School of Electrical Engineering and Computer Science), Stockholm, Sweden.

This PhD project focuses on Silicon Carbide (SiC) bipolar junction transistor (BJT) and insulated gate bipolar transistor (IGBT) devices for next-generation power electronics. The research aims to improve energy efficiency, performance, and reliability for applications in renewable energy, electric vehicles, and industrial automation.

The work includes fabrication and characterization of new devices in KTH’s Electrum Laboratory, with emphasis on semiconductor process technology and device performance enhancement. The PhD will be part of an internationally recognized SiC research group and the EU project WBG Pilot line.

Supervision: Prof. Per-Erik Hellström is proposed to supervise the doctoral student.

Eligibility: Applicants must have a second-cycle degree (for example a master’s degree), or at least 240 higher education credits including 60 second-cycle credits, or equivalent knowledge. English proficiency equivalent to English B/6 is required. Experience in power semiconductor devices and semiconductor process technology is an advantage.

Funding: Doctoral student employment with monthly salary according to KTH’s doctoral student salary agreement. Full-time temporary position.

Application: Submit the application through KTH’s recruitment system with diplomas, transcripts, proof of language requirements, CV, motivation letter, and representative publications/technical reports. Deadline: 31 August 2026.

Funding details

Doctoral student employment at KTH with monthly salary according to KTH’s doctoral student salary agreement. Temporary full-time position; employment is initially for up to one year and may be renewed, with total doctoral employment not exceeding four years.

What's required

Applicants must have basic eligibility for postgraduate education: a second-cycle degree such as a master's degree, or at least 240 higher education credits including at least 60 second-cycle credits, or equivalent knowledge acquired otherwise. English proficiency equivalent to English B/6 is mandatory. Experience with power semiconductor devices and semiconductor process technology is meritorious. Candidates should be goal oriented, persevering, able to work independently and collaboratively, maintain a professional approach, and analyze complex issues.

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