Junior Postdoctoral Researcher (JPR) – Computational Materials Science Institute of High Pressure Physics, Polish Academy of Sciences in Poland

Junior Postdoctoral Researcher (JPR) – Computational Materials Science at the Institute of High Pressure Physics, Polish Academy of Sciences, in the Center for Nitride Semiconductor Physics and Technology “GaN-Unipress” (an independent research unit in Warsaw region, Poland).

This is a full-time postdoctoral position within a project focused on advanced gallium nitride (GaN) and III-nitride semiconductor research for power electronics and quantum applications. The successful candidate will work across computational materials science, condensed matter physics, semiconductor physics, and materials informatics, contributing to WP4 and collaborating with WP1–WP3. Research topics include first-principles and atomistic simulations, density functional theory (DFT), defect physics, doping mechanisms, thermodynamics, crystal growth modeling, and process optimization. The role also includes development of a digital twin for ammonothermal GaN growth by integrating physics-based models, experimental data, and predictive approaches.

The project combines theoretical modeling with experimental collaboration on techniques such as MOCVD, HVPE, ion implantation, ultra-high-pressure annealing, and related epitaxial growth and defect formation studies. Machine learning, AI methods, numerical simulations, heat and mass transport, fluid dynamics, and growth kinetics may be part of the work. The broader project aims to advance GaN substrates, GaN-based power devices, and rare-earth-doped GaN structures for quantum sensing and single-photon sources.

Funding and terms: employment contract, full-time (40 hours/week), with monthly remuneration of 15,000–20,000 PLN total employer cost and expected net salary of about 8,800–11,600 PLN. The contract runs until 31 December 2029. Start date is expected in November/December 2026.

Eligibility highlights: PhD (or equivalent) in Physics, Materials Science, Computational Materials Science, Electrical Engineering, or a closely related field; PhD obtained not earlier than 3 years before the deadline; at least 5 peer-reviewed publications; strong knowledge of solid-state physics, quantum mechanics, materials physics, computational modeling, HPC, and Python/scientific computing; good English; Polish is preferred. Experience with GaN, wide-bandgap semiconductors, first-principles calculations, crystal growth, characterization, image analysis, and ML libraries is advantageous.

Application deadline: 28 October 2026, 23:59 (Europe/Warsaw).

How to apply: Send a CV, cover letter, PhD diploma/confirmation, referee contact details, and signed GDPR clause in PDF format in English to the listed email address. Applications not meeting formal requirements may be excluded.