Michał Boćkowski

The Institute of High Pressure Physics, Polish Academy of Sciences, invites applications for a Junior Postdoctoral Researcher (JPR) position focused on computational and technology-oriented development of GaN-based diode structures. This role is part of the Center for Nitride Semiconductor Physics and Technology “GaN-Unipress” project, funded by the Foundation for Polish Science and co-financed by the European Union. The project aims to advance gallium nitride (GaN) materials and devices for power electronics and quantum applications, integrating bulk GaN crystal growth, advanced epitaxial techniques, ion implantation, and AI/ML-supported process optimization. The successful candidate will work at the interface of advanced computational modeling and semiconductor technology development. Responsibilities include the design and simulation of p–n, p–i–n, and Schottky diode structures using TCAD tools, modeling doping profiles, carrier transport, defect-related recombination, and device behavior under various operating conditions. The researcher will develop physically sound models that incorporate realistic growth and process-related phenomena, refining them based on experimental feedback. Collaboration with experimental teams working on MOCVD, HVPE, MBE, ion implantation, and ultra-high-pressure annealing is expected, requiring a solid understanding of epitaxial processes and defect formation mechanisms. Applicants should have a strong grasp of semiconductor processing workflows, including metallization, contact optimization, and photolithography, to enable realistic TCAD device modeling. While direct cleanroom experience is advantageous, awareness of fabrication-induced effects relevant to device performance is essential. The position also involves participation in structural, optical, and electrical characterization of materials and devices, and quantitative correlation of experimental results with computational predictions. Close interaction between modeling and experimental data analysis is a key component of the research. The JPR will contribute to scientific publications, presentations at international conferences, collaborative research projects, and supervision of students. The project is organized into four work packages: growth and processing of high-quality GaN substrates, development of GaN-based power diodes, rare-earth-doped GaN structures for quantum applications, and data-driven optimization of materials growth and device fabrication processes. The overarching goal is to advance scientific understanding and deliver validated device structures ready for industrial implementation. Applicants must hold a PhD in Physics, Materials Science, Computational Materials Science, Electrical Engineering, or a closely related discipline, obtained not earlier than 7 years before the application deadline. A publication record in peer-reviewed journals, research experience in semiconductor materials and/or computational modeling, and proficiency with advanced computational packages are required. Additional qualifications such as cleanroom experience, knowledge of Polish, granted patents, participation in international conferences, and certificates in relevant training are considered advantageous. All application documents must be submitted in English and PDF format. The position offers a net salary of 8,800–11,600 PLN/month, with a contract until 31 December 2029. The research environment is highly collaborative, with opportunities for professional development and engagement in cutting-edge semiconductor research. For further information, visit http://unipress.waw.pl or see the full position details at Euraxess .

Junior Postdoctoral Researcher (JPR) – Computational Materials Science at the Institute of High Pressure Physics, Polish Academy of Sciences, in the Center for Nitride Semiconductor Physics and Technology “GaN-Unipress” (an independent research unit in Warsaw region, Poland). This is a full-time postdoctoral position within a project focused on advanced gallium nitride (GaN) and III-nitride semiconductor research for power electronics and quantum applications. The successful candidate will work across computational materials science, condensed matter physics, semiconductor physics, and materials informatics, contributing to WP4 and collaborating with WP1–WP3. Research topics include first-principles and atomistic simulations, density functional theory (DFT), defect physics, doping mechanisms, thermodynamics, crystal growth modeling, and process optimization. The role also includes development of a digital twin for ammonothermal GaN growth by integrating physics-based models, experimental data, and predictive approaches. The project combines theoretical modeling with experimental collaboration on techniques such as MOCVD, HVPE, ion implantation, ultra-high-pressure annealing, and related epitaxial growth and defect formation studies. Machine learning, AI methods, numerical simulations, heat and mass transport, fluid dynamics, and growth kinetics may be part of the work. The broader project aims to advance GaN substrates, GaN-based power devices, and rare-earth-doped GaN structures for quantum sensing and single-photon sources. Funding and terms: employment contract, full-time (40 hours/week), with monthly remuneration of 15,000–20,000 PLN total employer cost and expected net salary of about 8,800–11,600 PLN. The contract runs until 31 December 2029. Start date is expected in November/December 2026. Eligibility highlights: PhD (or equivalent) in Physics, Materials Science, Computational Materials Science, Electrical Engineering, or a closely related field; PhD obtained not earlier than 3 years before the deadline; at least 5 peer-reviewed publications; strong knowledge of solid-state physics, quantum mechanics, materials physics, computational modeling, HPC, and Python/scientific computing; good English; Polish is preferred. Experience with GaN, wide-bandgap semiconductors, first-principles calculations, crystal growth, characterization, image analysis, and ML libraries is advantageous. Application deadline: 28 October 2026, 23:59 (Europe/Warsaw). How to apply: Send a CV, cover letter, PhD diploma/confirmation, referee contact details, and signed GDPR clause in PDF format in English to the listed email address. Applications not meeting formal requirements may be excluded.

Junior Postdoctoral Researcher (JPR) position in Quantum Emitters and Rare-Earth Ions in GaN at the Institute of High Pressure Physics, Polish Academy of Sciences , within the Center for Nitride Semiconductor Physics and Technology “GaN-Unipress” in Warsaw, Poland. This full-time postdoctoral appointment is part of a project focused on advanced gallium nitride research for quantum applications. The successful candidate will study optically active point defects and rare-earth ions in GaN as building blocks for solid-state quantum photonic devices. The work emphasizes optical characterization of implanted rare-earth ions, including Eu and other technologically relevant dopants, and the microscopic mechanisms behind the formation, activation, and optical response of single-photon-emitting centers in GaN. A major research direction is the integration of GaN quantum emitters with tunable open optical microcavities. The project includes investigation of cavity-enhanced spontaneous emission and Purcell enhancement for rare-earth ions and defect-related single-photon emitters, with the longer-term goal of developing efficient GaN-based quantum light sources. Experimental work will involve low-temperature micro-photoluminescence, time-resolved spectroscopy, photon-correlation measurements, excitation spectroscopy, and optical coherence measurements. Depending on the candidate’s background, resonant spectroscopy and cavity-QED experiments may also be included. The postdoctoral researcher will collaborate with teams working on GaN growth, ion implantation, and ultra-high-pressure annealing at the Institute of High Pressure Physics PAS, with optical studies carried out primarily in the quantum optics laboratory at the Faculty of Physics, University of Warsaw. The position is embedded in a larger project on GaN materials and devices for power electronics and quantum technologies, combining bulk GaN growth, advanced epitaxy, ion implantation, annealing, and AI/ML-supported process optimization. Within the quantum work package, the project seeks reproducible creation of optically active rare-earth and defect-based emitters and control of their emission via coupling to optical microcavities. Funding: The position is financed through the Project International Research Agendas (MAB), Grant No. FENG.02.01-IP.05-M042/25. The gross monthly remuneration is 15,000–20,000 PLN, with an approximate net salary of 8,800–11,600 PLN. The contract runs until 31 December 2029. Eligibility highlights: Applicants must hold a PhD or equivalent in Physics, Materials Science, Computational Materials Science, Electrical Engineering, or a closely related discipline, obtained no earlier than 3 years before the deadline. Strong experience in experimental semiconductor physics, quantum optics, photonics, or optical spectroscopy is expected, along with good English and the ability to work collaboratively across materials and optical research teams. Application window: Deadline is 28 October 2026 at 23:59 (Europe/Warsaw).