Junior Postdoctoral Researcher (JPR) – Quantum Emitters and Rare-Earth Ions in GaN Institute of High Pressure Physics, Polish Academy of Sciences in Poland

Junior Postdoctoral Researcher (JPR) position in Quantum Emitters and Rare-Earth Ions in GaN at the Institute of High Pressure Physics, Polish Academy of Sciences, within the Center for Nitride Semiconductor Physics and Technology “GaN-Unipress” in Warsaw, Poland.

This full-time postdoctoral appointment is part of a project focused on advanced gallium nitride research for quantum applications. The successful candidate will study optically active point defects and rare-earth ions in GaN as building blocks for solid-state quantum photonic devices. The work emphasizes optical characterization of implanted rare-earth ions, including Eu and other technologically relevant dopants, and the microscopic mechanisms behind the formation, activation, and optical response of single-photon-emitting centers in GaN.

A major research direction is the integration of GaN quantum emitters with tunable open optical microcavities. The project includes investigation of cavity-enhanced spontaneous emission and Purcell enhancement for rare-earth ions and defect-related single-photon emitters, with the longer-term goal of developing efficient GaN-based quantum light sources.

Experimental work will involve low-temperature micro-photoluminescence, time-resolved spectroscopy, photon-correlation measurements, excitation spectroscopy, and optical coherence measurements. Depending on the candidate’s background, resonant spectroscopy and cavity-QED experiments may also be included. The postdoctoral researcher will collaborate with teams working on GaN growth, ion implantation, and ultra-high-pressure annealing at the Institute of High Pressure Physics PAS, with optical studies carried out primarily in the quantum optics laboratory at the Faculty of Physics, University of Warsaw.

The position is embedded in a larger project on GaN materials and devices for power electronics and quantum technologies, combining bulk GaN growth, advanced epitaxy, ion implantation, annealing, and AI/ML-supported process optimization. Within the quantum work package, the project seeks reproducible creation of optically active rare-earth and defect-based emitters and control of their emission via coupling to optical microcavities.

Funding: The position is financed through the Project International Research Agendas (MAB), Grant No. FENG.02.01-IP.05-M042/25. The gross monthly remuneration is 15,000–20,000 PLN, with an approximate net salary of 8,800–11,600 PLN. The contract runs until 31 December 2029.

Eligibility highlights: Applicants must hold a PhD or equivalent in Physics, Materials Science, Computational Materials Science, Electrical Engineering, or a closely related discipline, obtained no earlier than 3 years before the deadline. Strong experience in experimental semiconductor physics, quantum optics, photonics, or optical spectroscopy is expected, along with good English and the ability to work collaboratively across materials and optical research teams.

Application window: Deadline is 28 October 2026 at 23:59 (Europe/Warsaw).