Abasi Abudulimu

Cadmium telluride (CdTe) solar cells represent a commercially successful photovoltaic technology, with an annual production capacity approaching 20 GW. However, improving the open‐circuit voltage ( V OC ) remains challenging. This study aims to deepen the understanding of charge carrier recombination in CdTe solar cells and to explore alternative dynamical characterization methods that address the limitations found in conventionally used time‐resolved photoluminescence for CdTe solar cells. Transient photovoltage and transient photocurrent techniques are utilized to investigate charge carrier dynamics under conditions resembling real‐world solar cell operation. The results reveal that an effective nonradiative recombination lifetime of 580 ns dominates the charge dynamics at V OC values below 850 mV. Above this threshold, radiative recombination becomes significant, with a radiative recombination coefficient of 1.1 × 10 −9 cm 3 s −1 . Additionally, the stationary charge carrier density at 1 sun is determined to be around 1 × 10 14 cm −3 . By accurately determining both radiative and nonradiative recombination, this work provides a comprehensive understanding of carrier dynamics in high‐performing CdTe devices and paves the way for improving the V OC and performance of CdTe solar cells.