Andrea Padovani

Assistant Professor

Università degli Studi di Modena e Reggio Emilia - Sede di Reggio Emilia

Italy

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Andrea Padovani is an Assistant Professor at Università degli Studi di Modena e Reggio Emilia - Sede di Reggio Emilia, Italy. His research focuses on the degradation and breakdown kinetics of dielectric materials, particularly in the context of electronic devices. Recent publications include studies on HfO2 gate dielectrics, charge trapping dynamics, and the impact of defect states on device performance.

Articles (18)

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2025

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2021

Collaborators (5)

NAGARAJAN RAGHAVAN

Assistant Professor

Singapore University of Technology and Design

SINGAPORE

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Pablo Ordejon

Institut Català de Nanociència i Nanotecnologia

SPAIN

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Kin Leong Pey

Associate Provost/Professor

Singapore University of Technology and Design

SINGAPORE

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Alexander Shluger

University College London

UNITED KINGDOM

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Francesco Maria PUGLISI

Associate Professor

University of Modena and Reggio Emilia

ITALY

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Andrea Padovani

Research Interests

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About

Articles (18)

Microscopic Analysis of Degradation and Breakdown Kinetics in HfO2 Gate Dielectric after Ions Irradiation

Simulation and benchmarking of crossbar parasitic resistance models: Accuracy and performance comparison

Trapping Dynamics and Endurance in HfO2-FeFETs: An Insight from Charge Pumping

From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO₂ and HfO₂ Stacks

Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric

Dielectric breakdown of oxide films in electronic devices

The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al2O3 Layers

Author Correction: Dielectric breakdown of oxide films in electronic devices

High-k/InGaAs interface defects at cryogenic temperature

Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices

Pulse optimization and device engineering of 3D charge-trap flash for synaptic operation

Atomic Defects Profiling and Reliability of Amorphous Al2O3 Metal–Insulator–Metal Stacks

Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation

Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors

Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects

Analysis and Simulation of Interface Quality and Defect Induced Variability in MgO Spin-Transfer Torque Magnetic RAMs

Analysis and Simulation of Interface Quality and Defect Induced Variability in MgO Spin-Transfer Torque Magnetic RAMs

Collaborators (5)

NAGARAJAN RAGHAVAN

Pablo Ordejon

Kin Leong Pey

Alexander Shluger

Francesco Maria PUGLISI

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