Andreas Hangleiter

Professor

Germany

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Professor Andreas Hangleiter is a faculty member at the Technische Universität Braunschweig, Institut für Angewandte Physik in Germany. His research focuses on areas including point defect diffusion in III-nitrides, polarization anisotropy in semipolar AlInN/GaN heterostructures, and the quantum efficiency of GaInN/GaN quantum wells. His recent publications highlight significant findings related to thermal degradation and non-radiative recombination mechanisms in advanced semiconductor structures.

Articles (5)

Year:

2025

Year:

2024

Year:

2023

Year:

2022

Year:

2021

Collaborators (1)

Dirk Menzel

Technische Universität Carolo Wilhelmina zu Braunschweig

GERMANY

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Andreas Hangleiter

Research Interests

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Articles (5)

Point defect diffusion in III-nitrides: A key mechanism for thermal degradation and non-radiative recombination in GaInN/GaN quantum well structures

Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures

Polarization anisotropy and valence band ordering in semipolar (112¯2) AlInN/GaN heterostructures

Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions

Unity quantum efficiency in III-nitride quantum wells at low temperature: Experimental verification by time-resolved photoluminescence

Collaborators (1)

Dirk Menzel

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