Andreas Waag

Head of Institute, Professor

TU Braunschweig

Germany

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About

Andreas Waag is the Head of Institute and Professor at TU Braunschweig, Germany. His research focuses on semiconductor materials, particularly the properties and applications of InGaN/GaN micro-LEDs, as well as defects in AlN layers. Recent publications include studies on cathodoluminescence spectroscopy, neural networks based on microLED arrays, and advanced etching techniques for semiconductor patterning.

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2025

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2022

Collaborators (5)

Ismael Benito Altamirano

University of Barcelona

SPAIN

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Stefan Wolter

Technische Universität Braunschweig

GERMANY

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J. Daniel Prades

Full Professor

University of Barcelona

SPAIN

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Ulrich Schwarz

Professor

TU Chemnitz

GERMANY

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Carsten Ronning

Chair Professor

Friedrich Schiller University Jena

GERMANY

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Andreas Waag

Research Interests

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About

Articles (18)

Strategies for modifying the sidewall properties of InGaN/GaN micro-LEDs analyzed by the impact of the sidewall on charge carrier distribution and cathodoluminescence

Time‐Resolved Cathodoluminescence Spectroscopy of Oxygen‐Related Defects in AlN Layers

Mixed photonic/electronic neural network based on microLED arrays

Electrochemical Etching of Nitrogen Ion‐Implanted Gallium Nitride – A Route to 3D Nanoporous Patterning

The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes

Impact of etching conditions on the sidewall quality of InGaN/GaN micro-LEDs investigated by cathodoluminescence imaging

MicroLED arrays—A perspective beyond displays

MicroLEDs for optical neuromorphic computing—application potential and present challenges

A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlN

A dataset of color QR codes generated using back-compatible and random colorization algorithms exposed to different illumination-capture channel conditions

Back-compatible Color QR Codes for colorimetric applications

Parasitic AlxOyNz surface defects on high-temperature annealed AlN and their role in hillock formation

Publisher's Note: “Sublimation behavior of AlN in nitrogen and argon at conditions used for high-temperature annealing” [J. Appl. Phys. 133, 235704 (2023)]

Sublimation behavior of AlN in nitrogen and argon at conditions used for high-temperature annealing

Facet Control and Material Redistribution in GaN Growth on Three-Dimensional Structures

A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN

Ablation threshold of GaN films for ultrashort laser pulses and the role of threading dislocations as damage precursors

Gradients in Three-Dimensional Core-Shell GaN/InGaN Structures: Optimization and Physical Limitations

Collaborators (5)

Ismael Benito Altamirano

Stefan Wolter

J. Daniel Prades

Ulrich Schwarz

Carsten Ronning

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