Andrei Ionut Mardare

Titanium anodic memristors were prepared in phosphate buffer (PB) and citrate buffer (CB) electrolytes. Studying their I-U sweeps, the memristors presented self-rectifying and volatile behaviors. Transmission electron microscopic analysis revealed crystalline protrusions inside a semi-crystalline Ti oxide. Grounded in this, a hybrid interfacial memristive switching mechanism relaying on partial filaments was proposed. Moreover, both analyzed memristor types demonstrated multilevel switching capabilities. The memristors anodized in the PB and CB showed high-to-low resistance ratios of 4 × 104 and 1.6 × 102, respectively. The observed (more than two order of magnitude) ratio improvement of the PB memristors suggests their better performance, in spite of their modestly high resistive state instabilities, attributed to the thermal stress caused by consecutive switching. The endurance and retention of both the PB and CB memristors was measured over up to 106 cycles, indicating very good lifetimes. Phosphate incorporation into the anodic oxide was confirmed by photoelectron spectroscopy analysis and was related to the improved memristive behavior of the PB sample. The presence of phosphate inside the memristively active layer modifies the availability of free O species (vacancies and ions) in the oxide. Taking all this into consideration, Ti anodic memristors anodized in PB are emphasized as candidates for neuromorphic computing.