Andrei Vescan

Professor

RWTH Aachen University

Germany

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Professor Andrei Vescan is a faculty member at RWTH Aachen University in Germany. His research primarily focuses on the investigation and optimization of semiconductor devices, particularly in the areas of two-dimensional materials and their applications in electronic and optoelectronic devices. Recent contributions include work on Gallium Nitride Schottky diodes, MoS2 field-effect transistors, and 2D transition metal dichalcogenide heterostructures.

Articles (17)

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2025

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2025

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2025

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2025

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2024

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2024

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2024

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2024

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2023

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2023

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2023

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2023

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2023

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2023

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2022

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2021

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2020

Collaborators (6)

Zhenxing Wang

Head of Graphene Electronics Group

AMO GmbH

GERMANY

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Bart Macco

NETHERLANDS

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Sven Besendörfer

Fraunhofer Institute for Integrated Systems and Device Technology

GERMANY

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Mohamed Abdelbaky

Universität Duisburg-Essen

GERMANY

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Irene Goldthorpe

University of Waterloo

CANADA

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Martin Schroer

Universität Duisburg-Essen

GERMANY

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Andrei Vescan

Research Interests

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About

Articles (17)

Band structure alignment in transfer-free MOCVD grown 2D-TMDC heterostructures revealed by ambient KPFM

Investigation and Reduction of Surface Damage of Etched Quasi‐Vertical Gallium Nitride Schottky Diodes

Contact Resistance Optimization in MoS2 Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

Threshold Voltage Control in AlGaN/GaN/AlGaN Double-Heterostructure MISHFET Utilizing 2-D Electron and Hole Gases

Photogating through Unidirectional Charge Carrier Funneling in Two-Dimensional Transition Metal Dichalcogenide/Perovskite Heterostructure Photodetectors

Self-Powered Photodetectors Based on Scalable MOCVD-Grown WS<sub>2</sub>–MoS<sub>2</sub> Heterostructures

Flexible p-Type WSe2 Transistors with Alumina Top-Gate Dielectric

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe2 and n‐type MoS2

Silver nanowire electrodes for transparent light emitting devices based on WS2 monolayers

The MoS2-Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS2 Band Structure

Migration-Enhanced Metal–Organic Chemical Vapor Deposition of Wafer-Scale Fully Coalesced WS2 and WSe2 Monolayers

Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates

Optimization of Layer Transfer and Photolithography for Device Integration of 2D-TMDC

Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2

MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases

AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Collaborators (6)

Zhenxing Wang

Bart Macco

Sven Besendörfer

Mohamed Abdelbaky

Irene Goldthorpe

Martin Schroer

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