Anna Fontcuberta i Morral

professor

École Polytechnique Fédérale de Lausanne

Switzerland

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Anna Fontcuberta i Morral is a professor at École Polytechnique Fédérale de Lausanne in Switzerland. Her research primarily focuses on thermal rectification in nanostructures, optoelectronic properties of materials like Ge and GeSn, and the kinetics of GaAs nanostructures. She has published extensively on topics such as terahertz receivers, selective area epitaxy, and the behavior of dopants in semiconductor materials.

Articles (16)

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2025

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2024

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2024

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2024

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2024

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2024

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2023

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2023

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2023

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2023

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2023

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2023

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2022

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2022

Collaborators (12)

Xiaobing Hu

Research Assistant Professor

Northwestern University

UNITED STATES

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Lincoln Lauhon

Professor

Northwestern University

UNITED STATES

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Diana Leitao

Eindhoven University of Technology

NETHERLANDS

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Michael Johnston

University of Oxford

UNITED KINGDOM

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Thomas Siday

University of Birmingham

UNITED KINGDOM

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Kristina Lemmer

Western Michigan University

UNITED STATES

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Hélène Béa

Associate Professor

FRANCE

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Alessandro Surrente

Associate Professor

Politechnika Wroclawska

POLAND

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Didem Dede

Stanford University

UNITED STATES

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Julie Cairney

AUSTRALIA

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Jane Chang

Professor

University of California, Los Angeles

UNITED STATES

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Michał Baranowski

POLAND

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Anna Fontcuberta i Morral

Research Interests

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About

Articles (16)

Thermal Rectification in Telescopic Nanowires: Impact of Thermal Boundary Resistance

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Control of Ge island coalescence for the formation of nanowires on silicon

Unveiling the complex phonon nature and phonon cascades in 1L to 5L WSe2 using multiwavelength excitation Raman scattering

Defects in Ge and GeSn and their impact on optoelectronic properties

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

The 2022 applied physics by pioneering women: a roadmap

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors

Monolithic InSb nanostructure photodetectors on Si using rapid melt growth

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Strain induced lifting of the charged exciton degeneracy in monolayer MoS<sub>2</sub> on a GaAs nanomembrane

Collaborators (12)

Xiaobing Hu

Lincoln Lauhon

Diana Leitao

Michael Johnston

Thomas Siday

Kristina Lemmer

Hélène Béa

Alessandro Surrente

Didem Dede

Julie Cairney

Jane Chang

Michał Baranowski

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