Atsushi Kobayashi

Associate Professor

University of Tokyo

Japan

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Dr. Atsushi Kobayashi is an Associate Professor at Tokyo University of Science in Japan. His research areas include sputter epitaxy and its applications in superconductors, semiconductors, and ferroelectrics, with a focus on structural and electrical properties of ScAlN films. His recent publications explore the evolution and characterization of epitaxial films on various substrates, including GaN and SiC, and advancements in high electron mobility transistors.

Articles (17)

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2025

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2022

Collaborators (3)

Takahiro Kawamura

Assistant Professor

Mie university

JAPAN

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Takuya Maeda

Assistant Professor

University of Tokyo

JAPAN

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KOHEI UENO

The Univeristy of Tokyo

JAPAN

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Atsushi Kobayashi

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Articles (17)

Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics

Effect of growth temperature on the structural and electrical properties of sputter-epitaxial ScAlN on AlGaN/AlN/GaN heterostructures

Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures

Structural evolution in sputter-epitaxial ScAlN films on GaN/SiC substrates

Temperature‐Dependent Characteristics of AlN/Al0.5Ga0.5N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts

Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering

Structural and optical properties of epitaxial ScxAl1−xN coherently grown on GaN bulk substrates by sputtering method

Preparation of degenerate n-type AlxGa1−xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition

Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering

Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN

Electrical properties of N-polar Si-doped GaN prepared by pulsed sputtering

Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K

Crystal‐Phase Controlled Epitaxial Growth of NbNx Superconductors on Wide‐Bandgap AlN Semiconductors

Crystal-Phase Controlled Epitaxial Growth of NbNx Superconductors on Wide-Bandgap AlN Semiconductors

Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels

Reduction of Twin Boundary in NbN Films Grown on Annealed AlN

AlN/Al0.5Ga0.5N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering

Collaborators (3)

Takahiro Kawamura

Takuya Maeda

KOHEI UENO

Make your next move.

Atsushi Kobayashi

Research Interests

Explore related searches

Contact this professor

About

Articles (17)

Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics

Effect of growth temperature on the structural and electrical properties of sputter-epitaxial ScAlN on AlGaN/AlN/GaN heterostructures

Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures

Structural evolution in sputter-epitaxial ScAlN films on GaN/SiC substrates

Temperature‐Dependent Characteristics of AlN/Al0.5Ga0.5N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts

Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering

Structural and optical properties of epitaxial ScxAl1−xN coherently grown on GaN bulk substrates by sputtering method

Preparation of degenerate n-type AlxGa1−xN (0 &lt; x ≤ 0.81) with record low resistivity by pulsed sputtering deposition

Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering

Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN

Electrical properties of N-polar Si-doped GaN prepared by pulsed sputtering

Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K

Crystal‐Phase Controlled Epitaxial Growth of NbNx Superconductors on Wide‐Bandgap AlN Semiconductors

Crystal-Phase Controlled Epitaxial Growth of NbNx Superconductors on Wide-Bandgap AlN Semiconductors

Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels

Reduction of Twin Boundary in NbN Films Grown on Annealed AlN

AlN/Al0.5Ga0.5N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering

Collaborators (3)

Takahiro Kawamura

Takuya Maeda

KOHEI UENO

Make your next move.

Preparation of degenerate n-type AlxGa1−xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition