Byung Hee Hong

Molybdenum disulfide (MoS 2 ) is considered a fascinating material for next‐generation semiconducting applications due to its outstanding mechanical stability and direct transition characteristics comparable to silicon. However, its application to stretchable platforms still is a challenging issue in wearable logic devices and sensors with noble form‐factors required for future industry. Here, an omnidirectionally stretchable MoS 2 platform with laser‐induced strained structures is demonstrated. The laser patterning induces the pyrolysis of MoS 2 precursors as well as the weak adhesion between Si and SiO 2 layers. The photothermal expansion of the Si layer results in the crumpling of SiO 2 and MoS 2 layers and the field‐effect transistors with the crumpled MoS 2 are found to be suitable for strain sensor applications. The electrical performance of the crumpled MoS 2 depends on the degree of stretching, showing the stable omnidirectional stretchability up to 8% with approximately four times higher saturation current than its initial state. This platform is expected to be applied to future electronic devices, sensors, and so on.