Chee Hing Tan

Has grant

Professor of Opto-electronic Sensors

University of Sheffield

United Kingdom

Research Interests

Explore related searches

Professors in United Kingdom

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

About

Professor Chee Hing Tan is a faculty member at The University Of Sheffield, UK, specializing in Opto-electronic Sensors. His research areas include the development and analysis of advanced photon detection technologies, focusing on single photon avalanche diodes and various high-performance photodiodes. Recent articles authored by Professor Tan cover topics such as low noise equivalent power photoreceivers and the impact of ionization coefficients in semiconductor materials.

Recent Grants

Grant: Close

Next generation avalanche photodiodes: realising new potentials using nm wide avalanche regions

Open Date: 2013-03-31

Close Date: 2016-09-29

Grant: Close

InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications

Open Date: 2012-10-18

Close Date: 2016-03-13

Grant: Close

Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection

Open Date: 2010-11-01

Close Date: 2014-04-29

Grant: Close

New high-performance avalanche photodiodes based on the unique properties of dilute nitrides

Open Date: 2008-04-28

Close Date: 2010-07-27

Grant: Close

Novel InGaAs/InAlAs travelling wave avalanche photodiode for ultra high speed photonic applications

Open Date: 2006-12-22

Close Date: 2010-06-20

Articles (18)

Year:

2025

Year:

2025

Year:

2025

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2021

Year:

2020

Year:

Research Interests

Explore related searches

Contact this professor

About

Recent Grants

Articles (18)

Room Temperature InGaAs/AlGaAsSb Single Photon Avalanche Diode

An Extremely Low Noise-Equivalent Power Photoreceiver Using High-Gain InGaAs/AlGaAsSb APDs

InAs n-i-p Diodes Fabricated Using S and Si Ion Implantation

Low Noise Equivalent Power InAs Avalanche Photodiodes for Infrared Few-Photon Detection

Impact ionization coefficients and excess noise in Al0.55Ga0.45As0.56Sb0.44 lattice matched to InP

High-performance room temperature 2.75 µm cutoff In0.22Ga0.78As0.19Sb0.81/Al0.9Ga0.1As0.08Sb0.92 avalanche photodiode

Development of InGaAs/AlGaAsSb Geiger Mode Avalanche Photodiodes

GaAsSb/AlGaAsSb Avalanche Photodiode With High Gain-Linearity

Single-photon detection for long-range imaging and sensing

Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44

Extremely low excess noise avalanche photodiode with GaAsSb absorption region and AlGaAsSb avalanche region

Very low excess noise Al0.75Ga0.25As0.56Sb0.44 avalanche photodiode

A GaAsSb/AlGaAsSb Avalanche Photodiode With a Very Small Temperature Coefficient of Breakdown Voltage

Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP

Low Excess Noise of Al0.85Ga0.15As0.56Sb0.44 Avalanche Photodiode From Pure Electron Injection

Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications

Corrections to “Modeling Temperature Dependent Avalanche Characteristics of InP”

Modeling Temperature-Dependent Avalanche Characteristics of InP

Collaborators (9)

Gerald Buller

Robert Henderson

Jo Shien Ng

Mark Hopkinson

Robert Hadfield

Jonathan Leach

Douglas J. Paul

Tomasz Ochalski

Xin Yi

Make your next move.