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Daisuke Iida

Senior Researcher

National Institute of Advanced Industrial Science and Technology (AIST)

Japan

Research Interests

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Professors in Japan

Articles (20)

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2026

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2024

Collaborators (8)

Kazuhiro Ohkawa

Professor, Electrical Engineering

King Abdullah University of Science and Technology

SAUDI ARABIA

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Kanako Shojiki

講師 / Senior Lecturer/ Junior Associate Professor

Mie university

JAPAN

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Motoaki Iwaya

Professor

Meijo University

JAPAN

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Wenqing Niu

King Abdullah University of Science and Technology

SAUDI ARABIA

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Georgian Melinte

Staff Scientist

King Abdullah University of Science and Technology

SAUDI ARABIA

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Ryota Ishii

助教 / Assistant Professor

Kyoto University

JAPAN

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Yoichi Kawakami

Professor

Kyoto University

JAPAN

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Iman S. Roqan

Assistant Professor

King Abdullah University of Science and Technology

SAUDI ARABIA

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Daisuke Iida

Research Interests

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Articles (20)

Green InGaN LED-based quantum random number generation compatible with silicon avalanche photodiodes

Broadly tunable, narrow-linewidth light from a single GaN-based micro-cavity LED (MCLED)

GaN-Based Red Resonant Cavity Light-Emitting Diode up to 673 nm

650 nm emitting InGaN red micro-LEDs with ITO n-electrodes

Carrier Dynamics and Structural Analyses of Orange/Red In-Rich InGaN Double-Quantum Wells LED Hybridized by Blue InGaN Single-Quantum Well

Light extraction improvement via ITO p-electrodes for InGaN red micro-LEDs emitting at 640 nm

Nanoscopic structural and emission properties of red InGaN hybrid single quantum wells

Nanoscopic structural and optical investigations on blue InGaN single quantum wells serving as layers beneath efficient red active layers

Optical properties of InGaN-based red quantum well and microcavity

Raman Imaging Properties and Phonon Dynamics Analysis of GaInN/GaN Heterostructures using a Double Laser System

Correlative Micro‐Photoluminescence Study on Hybrid Quantum‐Well InGaN Red Light‐Emitting Diodes

Characteristics of Stacked GaInN-Based Red, Green, and Blue Full-Color Monolithic μLED Arrays Connected via Tunnel Junctions

Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate

Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A1(LO) and E2(high) Phonons in a GaInN/GaN Heterostructure

(10 1 ¯ 3)-oriented semipolar GaN growth on (10 1 ¯ 0) m-plane ScAlMgO4 substrate

Local augmentation of phonon transport at GaInN/GaN heterointerface by introducing a graded variation of InN mole fraction

Enhancing the efficiency of InGaN-based micro-LEDs using indium tin oxide p-electrodes

Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

Enhanced Efficiency InGaN/GaN Multiple Quantum Well Structures via Strain Engineering and Ultrathin Subwells Formed by V-Pit Sidewalls

Erratum: “Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A1(LO) and E2(high) Phonons in a GaInN/GaN Heterostructure” [Physica Status Solidi B, 2024, 2400057]

Collaborators (8)

Kazuhiro Ohkawa

Kanako Shojiki

Motoaki Iwaya

Wenqing Niu

Georgian Melinte

Ryota Ishii

Yoichi Kawakami

Iman S. Roqan

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