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Dirk J. Wouters

RWTH Aachen University

Germany

Research Interests

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Articles (13)

Year:

2025

Year:

2025

We fabricate a nano-device that laterally confines the switching oxide and filament to 10 nm. Electrical measurements demonstrate lower variability and reduced ionic noise compared to unconfined filaments, which is supported by our 3D simulation.

Year:

2024

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2024

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2024

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2024

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2024

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2023

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2023

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2023

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2023

Year:

2023

Year:

2022

Collaborators (1)

Younes Bouhadjar

Senior Research Scientist

Fraunhofer Institute for Integrated Circuits

GERMANY

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Dirk J. Wouters

Research Interests

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Articles (13)

Experimental Verification and Evaluation of Non-Stateful Logic Gates in Resistive RAM

Exploiting Read Noise of Filamentary VCM ReRAM for Robust TRNG

Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices

Full factorial analysis of gradual switching in thermally oxidized memristive devices

Accurate evaluation method for HRS retention of VCM ReRAM

Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices

Synaptogen: A Cross-Domain Generative Device Model for Large-Scale Neuromorphic Circuit Design

Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

Sequence learning in a spiking neuronal network with memristive synapses

System model of neuromorphic sequence learning on a memristive crossbar array

Coherent noise enables probabilistic sequence replay in spiking neuronal networks

Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems

Sequence learning, prediction, and replay in networks of spiking neurons

Collaborators (1)

Younes Bouhadjar

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