Elison Matioli

Professor

École Polytechnique Fédérale de Lausanne

Switzerland

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About

Elison Matioli is a Professor at École Polytechnique Fédérale de Lausanne in Switzerland. His research areas include GaN-based devices, micro-plasma technology for CO2 valorization, and terahertz electronic metadevices. He has authored several recent articles focusing on advanced materials and methods for enhancing power converter efficiencies and reducing power loss in electronic systems.

Articles (19)

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2025

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2022

Collaborators (6)

Guilherme Migliato Marega

EPFL (École Polytechnique Fédérale de Lausanne)

SWITZERLAND

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Shubhangi Bhadoria

KTH Royal Institute of Technology

SWEDEN

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Junwoo Son

Pohang University of Science and Technology

SOUTH KOREA

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Mohammad Samizadeh Nikoo

Assistant Professor

Nanyang Technological University (NTU)

SINGAPORE

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Hans-Peter Nee

KTH Royal Institute of Technology

SWEDEN

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Gilberto Curatola

Chief GaN Technical Expert

Huawei Technologies (Germany)

GERMANY

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Elison Matioli

Research Interests

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About

Articles (19)

2.7 kV E-Mode Multichannel GaN-on-Si Based on p-Type NiO/SiO2 Junction Tri-Gate

Low‐Power Tunable Micro‐Plasma Device for Efficient and Scalable CO2 Valorization

p-NiO/LiNiO-GaN Heterojunctions: A Potential Alternative to p-GaN for Advanced Devices

Terahertz Electronic Metadevices: Principles behind the Ultra-high Cutoff Frequency

Soft-Switching C O Hysteresis Losses in GaN HEMTs: A Resonant-Sawyer-Tower Measurement Method

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

Polarization-Enhanced GaN Schottky Barrier Diodes: Ultra-Thin InGaN for High Breakdown Voltage and Low Ron

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Electronic metadevices for terahertz applications

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Enhancement-Mode Multi-Channel AlGaN/GaN Transistors With LiNiO Junction Tri-Gate

Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate

Nanoplasma-Based Millimeter-Wave Modulators on a Single Metal Layer

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

A perspective on multi-channel technology for the next-generation of GaN power devices

Collaborators (6)

Guilherme Migliato Marega

Shubhangi Bhadoria

Junwoo Son

Mohammad Samizadeh Nikoo

Hans-Peter Nee

Gilberto Curatola

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