Elzbieta Guziewicz

Prof.

Institute of Physics, Polish Academy of Sciences

Poland

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Professor Elzbieta Guziewicz is a faculty member at the Institute of Physics, Polish Academy of Sciences. Her research primarily focuses on semiconductor materials, with recent work exploring phenomena such as breakdown in memory capacitors, migration of defects in ZnO, and the electronic structures of doped zinc oxide films. Additionally, she has contributed to studies on structural defects in β-Ga2O3 and the implications of strain on material properties.

Articles (19)

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Collaborators (12)

Przemysław Jóźwik

assistant professor

National Centre for Nuclear Research

POLAND

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Marek Barlak

National Centre for Nuclear Research

POLAND

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Bartlomiej Witkowski

Institute of Physics, Polish Academy of Sciences

POLAND

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Polska Akademia Nauk Instytut Fizyki

POLAND

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Monika Ożga

Institute of Physics, Polish Academy of Sciences

POLAND

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Rafal Jakiela

Institute of Physics, Polish Academy of Sciences

POLAND

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Elzbieta Guziewicz

Research Interests

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About

Articles (19)

Migration of Zn Vacancy and Acceptor Clustering in ZnO:N under Strain: DFT and Optical Studies

Impact of Trapped Charge on the Breakdown Phenomena in HfO2/Al2O3 — Based Memory Capacitors

Structural Defects and Luminescence in Sm‐Implanted β‐Ga2O3

Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-Ga2O3

P-Type ZnO Films Made by Atomic Layer Deposition and Ion Implantation

Defect accumulation in β-Ga2O3 implanted with Yb

Jaszowiec 2023: The 51st International School and Conference on the Physics of Semiconductors

The Impact of Carbon on Electronic Structure of N-Doped ZnO Films: Scanning Photoelectron Microscopy Study and DFT Calculations

Enhanced Luminescence of Yb3+ Ions Implanted to ZnO through the Selection of Optimal Implantation and Annealing Conditions

Atomic Layer Deposition of HfO2 Films Using TDMAH and Water or Ammonia Water

Cathodoluminescent Imaging of ZnO:N Films: Study of Annealing Processes Leading to Enhanced Acceptor Luminescence

Effect of Strain and Surface Proximity on the Acceptor Grouping in ZnO

Crystal Lattice Damage and Recovery of Rare-Earth implanted Wide Bandgap Oxides

The restricted random dislocation distribution model to describe ensembles of dislocations with a screw component in ZnO layers with a mosaic structure

Electrical and Structural Properties of Semi-Polar-ZnO/a-Al2O3 and Polar-ZnO/c-Al2O3 Films: A Comparative Study

Valence-Band Electronic Structure of ZnO and ZnO:N: Experimental and Theoretical Evidence of Defect Complexes

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>-Based Charge Trapping Layers

Growth and characterization of Ti-based films obtained from two selected precursors: H2O, TiCl4, Ti(N(CH3)2)4 or Al2(CH3)6 by the ALD method

Polarized dependence of soft X-ray absorption near edge structure of ZnO films implanted by Yb

Collaborators (12)

Przemysław Jóźwik

Marek Barlak

Bartlomiej Witkowski

Vitalii Ivanov

Ramon Schifano

Stefan Facsko

Cyprian Mieszczynski

Maryna Chernyshova

Svitlana Romaniuk

Aleksandra Wierzbicka

Monika Ożga

Rafal Jakiela

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