Eric Tournié

Professor

University of Montpellier

France

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Eric Tournié is a Professor at Université de Montpellier, France. His research focuses on the growth and integration of semiconductor materials for mid-infrared photonics and gas sensing applications. Recent publications include studies on molecular beam epitaxy techniques, strain relief in heterostructures, and the development of III-Sb solar cells. He is also involved in the advancements of photonic integrated circuits utilizing GaInAsSb and GaSb materials.

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Rodolphe Vaillon

CNRS Professor (Directeur de Recherche)

Institut national de la recherche scientifique

FRANCE

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Eric Tournié

Research Interests

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About

Articles (20)

MBE growth of GaSb on Ge-based templates grown on Si for mid-infrared photonics [Invited]

Material parameter models and simulations of III-Sb solar cells based on AlGaAsSb, AlInAsSb and GaInAsSb quaternary alloys

Strain relief and threading dislocation reduction in GaSb/AlSb/GaSb heterostructures grown on Si(001) substrate

Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy

Editorial

Single mode, distributed feedback interband cascade lasers grown on Si for gas sensing

Heterogeneous integration of GaInAsSb–GaSb photodiodes on SOI photonic integrated circuits for SWIR applications

Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

Improved light transmission for III-V lasers monolithically integrated on Si platforms

Intensity noise and modulation dynamics of an epitaxial mid-infrared interband cascade laser on silicon

Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Effect of dislocations on the performance of GaSb-based diode lasers grown on silicon

Analysis of the Optical Coupling Between GaSb Diode Lasers and Passive Waveguides: A Step Toward Monolithic Integration on Si Platforms

Characterization and Simulation of AlGaAsSb/GaSb Tandem Solar Cell

Impact of the ridge etching‐depth on GaSb‐based laser diodes

Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

Near-Field Thermophotovoltaic Conversion with High Electrical Power Density and Cell Efficiency above 14%

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

Quantum well interband semiconductor lasers highly tolerant to dislocations

Modeling and Characterization of an MBE-Grown Concentrator P-N GaSb Solar Cells Using a Pseudo-3D Model

Collaborators (8)

Luke J. Mawst

Charles Cornet

L. Cerutti

Thierry Taliercio

P.-O. Chapuis

Jean‐baptiste Rodriguez

Gilles Patriarche

Rodolphe Vaillon

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