Fei Qin

Purdue University

United States

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Articles (4)

Finite element analysis provides visual insights into conductive path evolution in a SiO 2 -based memristor. Electrochemical impedance spectroscopy experimentally validated the theoretical findings by interpreting with an equivalent circuit.

Year:

2024

Year:

2023

Year:

2022

Year:

2022

Collaborators (1)

Sunghwan Lee

Purdue University

UNITED STATES

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Fei Qin

Research Interests

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Articles (4)

High on/off ratio SiO<sub>2</sub>-based memristors for neuromorphic computing: understanding the switching mechanisms through theoretical and electrochemical aspects

Enhancing memristor fundamentals through instrumental characterization and understanding reliability issues

Factors Determining the Resistive Switching Behavior of Transparent InGaZnO-Based Memristors

The Effect of Bias Stress on the Performance of Amorphous InAlZnO-Based Thin Film Transistors

Collaborators (1)

Sunghwan Lee

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