Firman Mangasa Simanjuntak

University of Southampton

United Kingdom

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Articles (13)

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2024

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2024

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2024

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2022

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2022

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2022

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2022

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2022

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2021

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2021

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2021

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2021

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2021

Collaborators (4)

Seiji Samukawa

Tohoku University

JAPAN

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Julianna Panidi

UNITED KINGDOM

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Vlado Lazarov

University of York

UNITED STATES

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Themis Prodromakis

UNITED KINGDOM

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Firman Mangasa Simanjuntak

Research Interests

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Articles (13)

High-Performance TiN/TaOx/TiN Selectors With Short-Term Memory Characteristics

Forming-Free and Non-linear Resistive Switching in Bilayer $$\hbox {HfO}_{\textrm{x}}$$/$$\hbox {TaO}_{\textrm{x}}$$ Memory Devices by Interface-Induced Internal Resistance

γ-ray -induced Effects in Al:HfO2-based Memristor Devices for Memory and Sensor Applications

Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processing

Transparent ZnO resistive switching memory fabricated by neutral oxygen beam treatment

Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices

Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications

Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas Sensor

Conduction channel configuration controlled digital and analog response in TiO2-based inorganic memristive artificial synapses

Crafting the multiferroic BiFeO3-CoFe2O4 nanocomposite for next-generation devices: A review

Low-power electronic technologies for harsh radiation environments

Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Collaborators (4)

Seiji Samukawa

Julianna Panidi

Vlado Lazarov

Themis Prodromakis

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