Francisco Rogelio Palomo Pinto

Assistant Professor

Spain

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Articles (10)

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Year:

2022

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2022

Year:

2021

Year:

2021

Year:

2021

Year:

2020

Collaborators (14)

Jose Maria Hinojo

Profesor Ayudante Doctor

Universidad de Huelva

SPAIN

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Jozef Andrzejewski

professor

University of Łódź

POLAND

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Daniel Cano-Ott

Profesor de Investigación

CIEMAT

SPAIN

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Laurent Audouin

Maitre de Conférence (associated professor)

Université Paris-Saclay

FRANCE

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Raul Montero

University of the Basque Country

SPAIN

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Alexander Smith

The University of Manchester

UNITED KINGDOM

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Fernando Muñoz Chavero

Profesor Titular de Universidad

Universidad de Sevilla

SPAIN

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Clara Isabel Lujan Martinez

Profesora Contratada Doctora

Universidad de Sevilla

SPAIN

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Fernando J. Márquez Lasso

Profesor Sustituto Interino asimilado a Asociado

Universidad de Sevilla

SPAIN

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Javier Praena

Full Professor

Universidad de Granada

SPAIN

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Erwin Jericha

TU Wien

AUSTRIA

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Gavin Smith

The University of Manchester

UNITED KINGDOM

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Nikolas Patronis

Professor

University of Ioannina

GREECE

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Carlos Guerrero

Profesor Titular

Universidad de Sevilla

SPAIN

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Francisco Rogelio Palomo Pinto

Research Interests

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Articles (10)

Optimizing Time Resolution Electronics for DMAPs

Corrigendum: “Measurement of <sup>73</sup>Ge(n,γ) cross sections and implications for stellar nucleosynthesis” [Phys. Lett. B 790 (2019) 458–465, (S037026931930070X), (10.1016/j.physletb.2019.01.045)]

Effect of ionizing radiation on quasi-floating gate transistors

First observation of the charge carrier density related gain reduction mechanism in LGADs with the Two Photon Absorption-Transient Current Technique

Characterisation of irradiated and non-irradiated silicon sensors with a table-top two photon absorption TCT system

Fiber laser system of 1550 nm femtosecond pulses with configurable properties for the two-photon excitation of transient currents in semiconductor detectors

Development of a Tabletop Setup for the Transient Current Technique Using Two-Photon Absorption in Silicon Particle Detectors

Ionizing radiation damage in 65 nm CMOS technology: Influence of geometry, bias and temperature at ultra-high doses

Ionizing radiation hardness tests of GaN HEMTs for harsh environments

Investigation of the Pu 240 (n,f) reaction at the n_TOF/EAR2 facility in the 9 meV-6 MeV range

Collaborators (14)

Jose Maria Hinojo

Jozef Andrzejewski

Daniel Cano-Ott

Laurent Audouin

Raul Montero

Alexander Smith

Fernando Muñoz Chavero

Clara Isabel Lujan Martinez

Fernando J. Márquez Lasso

Javier Praena

Erwin Jericha

Gavin Smith

Nikolas Patronis

Carlos Guerrero

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