Friedhelm Bechstedt

friedrich schiller universität

Germany

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Articles (15)

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2025

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2025

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2025

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2022

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2022

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2021

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2021

Collaborators (9)

Victor Theodoor van Lange

Eindhoven University of Technology

NETHERLANDS

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Olivia Pulci

Full Prof. , Dr.

Università degli Studi di Roma La Sapienza

ITALY

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GIANCARLO CAPPELLINI

Associate Professor of Physics

University of Cagliari

ITALY

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Jos E. M. Haverkort

Eindhoven University of Technology

NETHERLANDS

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Silvana Botti

Professor of Theoretical Physics / Computational Design of Functional Interfaces

Ruhr-Universität Bochum

GERMANY

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Marcel Verheijen

NETHERLANDS

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Gianlorenzo Bussetti

Associate Professor

Politecnico di Milano

ITALY

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Claudia Rödl

Friedrich Schiller University Jena

GERMANY

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Margherita Marsili

Assistant Professor

University of Bologna

ITALY

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Friedhelm Bechstedt

Research Interests

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Articles (15)

Layer-dependent electronic, vibrational and optical properties of 2D AlSe crystals

Phonons and thermal properties of α-, β-, δ-, and κ-Ga2O3 polymorphs from first principles studies

Comment on “Diamond (111) surface reconstruction and epitaxial graphene interface”

Electronic and Optical Properties of Highly Complex Ga2O3 and In2O3 Polymorphs Using Approximate Quasiparticle DFT + A – 1/2

Direct bandgap quantum wells in hexagonal Silicon Germanium

Structural, Electronic and Vibrational Properties of B24N24 Nanocapsules: Novel Anodes for Magnesium Batteries

Nanosecond Carrier Lifetime of Hexagonal Ge

Electronic and Optical Properties of Alkaline Earth Metal Fluoride Crystals with the Inclusion of Many-Body Effects: A Comparative Study on Rutile MgF2 and Cubic SrF2

Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal SixGe1−x alloys

Tuning Gaps and Schottky Contacts of Graphene/Phosphorene Heterostructures by Vertical Electric Field and Strain

First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes

Electronic structure, vibrational properties, and optical spectra of two- and three-dimensional hexagonal InSe: Layer-dependent ab initio calculations

Band lineup at hexagonal SixGe1−x/SiyGe1−y alloy interfaces

From pseudo-direct hexagonal germanium to direct silicon-germanium alloys

DFT-1/2 method applied to 2D topological insulators: fluorinated and hydrogenated group-IV honeycomb systems

Collaborators (9)

Victor Theodoor van Lange

Olivia Pulci

GIANCARLO CAPPELLINI

Jos E. M. Haverkort

Silvana Botti

Marcel Verheijen

Gianlorenzo Bussetti

Claudia Rödl

Margherita Marsili

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