ganesh balakrishnan

Professor

University of New Mexico

United States

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Ganesh Balakrishnan is a Professor at the University of New Mexico, USA. His research areas focus on advanced photonic devices, including photonic crystal surface emitting lasers, mid-wave infrared photodetectors, and semiconductor materials. Recent articles by Professor Balakrishnan examine degradation mechanisms in epitaxially grown materials and the impact of various factors on device performance.

Articles (16)

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2025

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2025

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2024

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2024

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2024

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2023

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2023

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2023

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2022

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2022

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2022

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2021

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2021

Collaborators (5)

Talid Sinno

UNITED STATES

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Chhabindra Gautam

Graduate Research/Teaching Assistant

The University of Texas at Arlington

UNITED STATES

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yudong chen

The University of Texas at Arlington

UNITED STATES

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Sang M. Han

UNITED STATES

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Darryl Shima

Research Assistant Professor

University of New Mexico

UNITED STATES

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ganesh balakrishnan

Research Interests

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About

Articles (16)

Recent Advances in Photonic Crystal Surface Emitting Lasers

Tracing degradation mechanisms of epitaxially grown GaAsSb on InP by InSb formation at elevated temperatures

Mode distribution impact on photonic crystal surface emitting laser performance

Laterally coupled photonic crystal surface emitting laser arrays

Analytic modeling of sensitivity in diffusion-limited type-II superlattice mid-wave infrared nBn photodetectors for design optimization for low-irradiance conditions

MBE growth of In0.53Ga0.47Sb on In0.53Ga0.47As/InP substrates using the interfacial misfit dislocation arrays

High-temperature characterization of interdigitated transducers on gallium arsenide and surface acoustic wave analysis via interdigitated transducer modeling

Demonstration of a 4.32 μ m cutoff InAsSbBi nBn photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing

Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice nBn detector performance

Exploring electromechanical utility of GaAs interdigitated transducers; using finite-element-method-based parametric analysis and experimental comparison

Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors

Low power optical bistability from quantum dots in a nanobeam photonic crystal cavity

Scaling Challenges in High Power Photonic Crystal Surface-Emitting Lasers

Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy

Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering

Controllable finite ultra-narrow quality-factor peak in a perturbed Dirac-cone band structure of a photonic-crystal slab

Collaborators (5)

Talid Sinno

Chhabindra Gautam

yudong chen

Sang M. Han

Darryl Shima

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