Gil-Ho Kim

Has grant

Professor

Sungkyunkwan University

South Korea

Research Interests

Explore related searches

Professors in South Korea

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

About

Professor Gil-Ho Kim is a faculty member at Sungkyunkwan University - Suwon Campus, South Korea. His research focuses on electronic and optoelectronic properties of 2D materials, including studies on MoTe2, WSe2, and graphene/MoS2 heterostructures. Recent publications highlight advancements in field-effect transistors, nanostructures, and novel transport phenomena in low-dimensional systems.

Recent Grants

Grant: Close

NRF

Open Date:

Close Date:

Articles (22)

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Year:

2021

Year:

2021

Year:

2021

Year:

2021

Year:

2021

Collaborators (6)

Nobuyuki Aoki

Professor

Chiba University

JAPAN

View details

David Ferry

Regents' Professor

Arizona State University

UNITED STATES

View details

Dongmok Whang

Professor

Sungkyunkwan University

SOUTH KOREA

View details

Brian Kim

Assistant Professor

University of Arizona

UNITED STATES

View details

Min Sup Choi

Assistant Professor

Chungbuk National University

SOUTH KOREA

View details

Jonathan Bird

Professor

University at Buffalo

UNITED STATES

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Gil-Ho Kim

Research Interests

Explore related searches

Contact this professor

About

Recent Grants

Articles (22)

Tellurium-Assisted Recrystallization of MoTe2 for Improved Electronic and Optoelectronic Properties

Controlled Charge Polarity in WSe2 Field‐Effect Transistor Grown by Self‐Flux Method

Enhanced Photoresponse of VO2 Nanowires by Surface Doping with Au Nanoparticles via Dielectrophoresis Method

Electrostatic control of transconductance oscillations in MoS2/WSe2 heterostructure

Transport properties of graphene/MoS2 heterostructure device in the low carrier density regime at cryogenic temperatures

Nonsaturated large magnetoresistance and transport dynamics in a n-doped cryogenic WSe2 field-effect device

Spin-resolved tunneling into an atomic defect in MoS2

Gate-Tunable Negative Differential Resistance in WSe2/h-BN/Graphene Heterostructure

Double-Side-Doped 2D TMD FET Channel

Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS2 Field Effect Transistors

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device

Multilayer Black Phosphorus/Hexagonal Boron Nitride/Graphene Heterostructure Metal–Insulator–Semiconductor Diode

Dual-Channel WS2/WSe2 Heterostructure with Tunable Graphene Electrodes

MoTe2-Based Schottky Barrier Photodiode Enabled by Contact Engineering

Self‐Forming p–n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts

Enhanced Performance of WS2 Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts

Schottky Diode with Asymmetric Metal Contacts on WS2

Valley polarized conductance quantization in bilayer graphene narrow quantum point contact

Signature of Spin-Resolved Quantum Point Contact in p-Type Trilayer WSe2 van der Waals Heterostructure

High mobility field-effect transistors based on MoS2 crystals grown by the flux method

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2/MoTe2 Heterostructures

High-performance ambipolar MoS2 transistor enabled by indium edge contacts

Collaborators (6)

Nobuyuki Aoki

David Ferry

Dongmok Whang

Brian Kim

Min Sup Choi

Jonathan Bird

Make your next move.