Giorgio Vannini

Full Professor

University of Ferrara

Italy

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Giorgio Vannini is a Full Professor at Università degli Studi di Ferrara, Italy. His research focuses on the development and modeling of semiconductor devices, with particular emphasis on GaN HEMTs and their applications in telecommunications and microwave components. Recent publications explore calibration techniques for electromagnetic simulators, transistor modeling methodologies, and advancements in amplifier design for satellite communication.

Articles (10)

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2024

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2024

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2023

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2023

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2023

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2022

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2022

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2021

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2020

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2020

Collaborators (4)

Rocco Giofrè

Associate Professor

University of Rome Tor Vergata

ITALY

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Giovanni Crupi

University of Messina

ITALY

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Anwar Jarndal

UNITED ARAB EMIRATES

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Nicola Donato

Full Professor

Università degli Studi di Palermo

ITALY

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Giorgio Vannini

Research Interests

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Articles (10)

On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past

A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers

A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function

A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation

Active Balun Design for Next-Generation Telecom Satellite Frequency Converters

Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection

Equivalent‐circuit extraction for gallium nitride electron devices: Direct versus optimization‐empowered approaches

An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

Scalability of Multifinger HEMT Performance

A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations

Collaborators (4)

Rocco Giofrè

Giovanni Crupi

Anwar Jarndal

Nicola Donato

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