Grzegorz Sęk

Professor

University of Wrocław

Poland

Research Interests

Explore related searches

Professors in Poland

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

About

Grzegorz Sęk is a Professor at Wrocław University of Science and Technology in Poland. His research focuses on advanced semiconductor materials and photonics, with recent articles addressing topics such as quantum dot integration, optical properties of semiconductor structures, and telecom applications. His work includes the study of III–V nano-heterostructures and the fabrication of high-purity single-photon sources.

Articles (15)

Year:

2025

Year:

2025

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Year:

2021

Year:

2021

Year:

2021

Year:

2021

Year:

2021

Collaborators (10)

Aurimas Sakanas

Technical University of Denmark

DENMARK

View details

Jarosław Serafińczuk

POLAND

View details

Wojciech Rudno-Rudziński

POLAND

View details

Mohamed Benyoucef

GERMANY

View details

Agata Zielińska

Wrocław University of Scince and Technology

POLAND

View details

Miroslawa Pawlyta

Assistant Professor

Silesian University of Technology

POLAND

View details

Aleksander Maryński

Assistant reader

Politechnika Wroclawska

POLAND

View details

Pawel Mrowinski

University of Wrocław

POLAND

View details

Paweł Podemski

Associate professor

University of Wrocław

POLAND

View details

Marcin Syperek

University Professor

University of Wrocław

POLAND

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Grzegorz Sęk

Research Interests

Explore related searches

Contact this professor

About

Articles (15)

Monolithic Integration of Sub‐50 nm III–V Nano‐Heterostructures on Si (001) for Telecom Photonics

High optical anisotropy of the GaSb/GaxIn1−xAsySb1−y interface

Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding

Xenon plasma-focused ion beam milling for fabrication of high-purity, bright single-photon sources operating in the C-band

High-resolution X-ray diffraction to probe quantum dot asymmetry

Distributed Bragg Reflector–Mediated Excitation of InAs/InP Quantum Dots Emitting in the Telecom C‐Band

Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range

Interdash Coupling within Dense Ensembles of Quantum Dashes: Comparison of InAs /( In , Al , Ga ) As / InP and InAs /( In , Al ) As / InP Systems

Diamagnetic coefficients and g-factors of InAs/InGaAlAs quantum dashes emitting at telecom wavelengths

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

Towards Interband Cascade lasers on InP Substrate

Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate

InP-based single-photon sources operating at telecom C-band with increased extraction efficiency

Interband Cascade Active Region with Ultra-Broad Gain in the Mid-Infrared Range

InP-Substrate-Based Quantum Dashes on a DBR as Single-Photon Emitters at the Third Telecommunication Window

Collaborators (10)

Aurimas Sakanas

Jarosław Serafińczuk

Wojciech Rudno-Rudziński

Mohamed Benyoucef

Agata Zielińska

Miroslawa Pawlyta

Aleksander Maryński

Pawel Mrowinski

Paweł Podemski

Marcin Syperek

Make your next move.